1SS226,LF Toshiba

1SS226 Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 S-Mini Start of commercial production 1982-09 2017-2021 2021-06-30 1 Toshiba Electronic Devices & Storage Corporation Rev.6.01SS226 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Peak forward current I (Note 1) 300 mA FM Average rectified current I (Note 1) 100 O Power dissipation P (Note 2), (Note 3) 200 mW D (Note 4) 150 Non-repetitive peak forward surge current I (Note 1), (Note 5) 2 A FSM Junction temperature T (Note 3) 150 j (Note 4) 125 Storage temperature T (Note 3) -55 to 150 stg (Note 4) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating 70% Note 2: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt, Cu pad: 0.8 mm2 3) Note 3: For devices with the ordering part number ending in LF(T. Note 4: For devices with the ordering part number in other than LF(T. Note 5: Pulse width 10 ms 5. Electrical Characteristics (Unless otherwise specified, T = 25 ) a Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.60 V F(1) F V I = 10 mA 0.72 F(2) F V I = 100 mA 0.90 1.20 F(3) F Reverse current I V = 30 V 0.1 A R(1) R I V = 80 V 0.5 R(2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF t R Reverse recovery time t I = 10 mA 1.6 4.0 ns rr F See Fig. 5.1. Fig. 5.1 Reverse recovery time (trr) Test circuit 2017-2021 2021-06-30 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0