Product Information

1SS294S,LF

1SS294S,LF electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers LV High Speed 0.54V 45V VRM 40VR 300 mA

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

1SS294S,LF
Toshiba

1 : USD 0.4255
10 : USD 0.2391
100 : USD 0.1026
1000 : USD 0.079
3000 : USD 0.0605
9000 : USD 0.0567
24000 : USD 0.0554
45000 : USD 0.0529
99000 : USD 0.0504
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : V = 0.54V (typ.) F (3) z Low reverse surrent : I = 5A (max) R z Small package : SC59 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Power dissipation P 150 mW JEDEC TO236MOD Junction temperature T 125 C j JEITA SC59 Storage temperature range T 55~125 C stg TOSHIBA 13G1B Weight: 0.012g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25 C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.28 F (1) F Forward voltage V V I = 10mA 0.36 F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0, f = 1MHz 18 25 pF T R Marking 1 2007-11-01 1SS294 2 2007-11-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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