Product Information

1SS250(TE85L,F)

1SS250(TE85L,F) electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5678 ea
Line Total: USD 0.57

2648 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1885 - WHS 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 0.4174
10 : USD 0.2933
100 : USD 0.1484
1000 : USD 0.107
3000 : USD 0.0943
9000 : USD 0.0851
24000 : USD 0.084
45000 : USD 0.0782
99000 : USD 0.0748

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Ir - Reverse Current
Series
Packaging
Pd - Power Dissipation
Brand
Factory Pack Quantity :
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Toshiba"

Image Description
1SS271(TE85L,F) electronic component of Toshiba 1SS271(TE85L,F)

Diode Schottky 6V 0.03A 3-Pin S-Mini T/R
Stock : 41987

1SS294S,LF electronic component of Toshiba 1SS294S,LF

Schottky Diodes & Rectifiers LV High Speed 0.54V 45V VRM 40VR 300 mA
Stock : 0

1SS295(TE85L,F) electronic component of Toshiba 1SS295(TE85L,F)

Toshiba Schottky Diodes & Rectifiers 4V 0.03A Schottky 0.6pF 0.25V Vf
Stock : 0

1SS300,LF electronic component of Toshiba 1SS300,LF

Diodes - General Purpose, Power, Switching USM M8 DIODE PD=100mW IFM=300mA
Stock : 13464

1SS301,LF electronic component of Toshiba 1SS301,LF

Diodes - General Purpose, Power, Switching USM M8 DIODE IFM=300mA
Stock : 3

1SS272TE85LF electronic component of Toshiba 1SS272TE85LF

Diodes - General Purpose, Power, Switching 0.1A 80V Switching Diode SMQ High
Stock : 6300

1SS301SU,LF electronic component of Toshiba 1SS301SU,LF

Diodes - General Purpose, Power, Switching High Speed 0.9V VF 85Vrm 80Vr 300mA
Stock : 0

1SS294,LF electronic component of Toshiba 1SS294,LF

Schottky Diodes & Rectifiers SS Schottky 45Vrm 40V VR 300mA
Stock : 936

1SS294,LF(T electronic component of Toshiba 1SS294,LF(T

Schottky Barrier Diodes (SBD) SC-59 RoHS
Stock : 46280

1SS300(TE85L,F) electronic component of Toshiba 1SS300(TE85L,F)

Diode: switching; SMD; 85V; 100mA; 4ns; Package: Reel, tape; SOT323
Stock : 2980

More Products By Category "Diodes - General Purpose, Power, Switching"

Image Description
1SS307(TE85L,F) electronic component of Toshiba 1SS307(TE85L,F)

Diodes - General Purpose, Power, Switching Switching diode, 30V 3 pins, S-Mini 0.1A
Stock : 2055

1SS308(TE85L,F electronic component of Toshiba 1SS308(TE85L,F

Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Stock : 0

1SS355-TP electronic component of Micro Commercial Components (MCC) 1SS355-TP

Micro Commercial Components (MCC) Diodes - General Purpose, Power, Switching Sgle .1A, 90V
Stock : 14283

1SS361LPH4-7B electronic component of Diodes Incorporated 1SS361LPH4-7B

Diodes - General Purpose, Power, Switching Switching Diode BVR VR 100V,X2-DFN1006-2
Stock : 605

1SS362TE85LF electronic component of Toshiba 1SS362TE85LF

Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Stock : 3000

1SS370TE85LF electronic component of Toshiba 1SS370TE85LF

Toshiba Diodes - General Purpose, Power, Switching 0.1A 200V Switching High-Speed Diode
Stock : 2890

1SS379TE85LF electronic component of Toshiba 1SS379TE85LF

Diodes - General Purpose, Power, Switching VF 1.0V IR 0.1nA CT CT 3.0pF 85 Vrm
Stock : 14410

1SS381,L3F electronic component of Toshiba 1SS381,L3F

PIN Diodes Radio-Freq Switch 30V Vr 0.7pF .6ohm
Stock : 0

1SS382TE85LF electronic component of Toshiba 1SS382TE85LF

Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Stock : 9527

1SS387CT(TPL3) electronic component of Toshiba 1SS387CT(TPL3)

Toshiba Diodes - General Purpose, Power, Switching Ultra Hi Speed 80V 100mA
Stock : 0

Additional Infomation About Product

1SS250 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 Unit: mm High Voltage, High Speed Switching Application Low forward voltage : V = 0.90 V (typ.) F (2) Fast reverse recovery time : t = 60 ns (max) rr Small total capacitance : C = 1.5 pF (typ.) T Small package : SC59 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 250 V RM Reverse voltage V 200 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10 ms) I 2 A FSM JEDEC TO 236MOD P (Note 1, 3) 200 D Power dissipation mW JEITA SC5 9 P (Note 2) 150 D TOSHIBA 2 3F1S T (Note 1) 150 j Junction temperature C Weight: 12 mg (typ.) T (Note 2) 125 j T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Start of commercial production 1984-05 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS250 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.72 1.00 F (1) F Forward voltage V V I = 100 mA 0.90 1.20 F (2) F I V = 50 V 0.1 R (1) R Reverse current A I V = 200 V 1.0 R (2) R C V = 0 V, f = 1 MHz 1.5 3.0 Total capacitance T R pF Reverse recovery time t I = 10 mA (Fig.1) 10 60 ns rr F Marking Fig.1 Reverse recovery time (t ) test circuit rr 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted