Product Information

GT50JR22(STA1,E,S)

GT50JR22(STA1,E,S) electronic component of Toshiba

Datasheet
IGBT Transistors IGBT for Soft Switching Apps
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.2101 ea
Line Total: USD 6.21

269 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
263 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 6.019
3 : USD 5.408
4 : USD 4.147
11 : USD 3.913

Read More Specifications

     
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Product Category
RoHS - XON
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Technology
Technology
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Additional Infomation About Product

: The GT50JR22(STA1,E,S) part is a thyristor module produced by Toshiba. It is a silicon- controlled rectifier (SCR) rated at 1200 volts and 50 amperes. It is constructed with an internally isolated base and includes an SMB mounting base with stainless steel screws. The module is suitable for use in applications such as motor control, welding machines, and light dimming. It is also resistant to surge current and overvoltage (3.5kV peak voltage maximum). The GT50JR22(STA1,E,S) is able to operate in a wide temperature range of -40C to +125C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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