TLP797GA TOSHIBA Photocoupler Photorelay TLP797GA Cordless Telephone Unit: mm PBX MODEM The TOSHIBA TLP797GA consists of an infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package (DIP6). The TLP797GA is a bi-directional switch which can replace mechanical relays in many applications. 6 pin DIP (DIP6) 1-form-A Peak off-state voltage: 400 V (min) Trigger LED current: 3 mA (max) On-state current: 120 mA (max) On-state resistance: 35 (max) Isolation voltage: 5000 Vrms (min) UL-recognized: UL 1577, File No.E67349 JEDEC cUL-recognized: CSA Component Acceptance Service No.5A JEITA File No.E67349 TOSHIBA 11-7A8S VDE-approved : EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, Weight: 0.4 g (typ.) please designate the Option(D4). Pin Configuration (top view) 1: Anode 1 6 2: Cathode 3: N.C. 2 5 4: Drain D1 5: Source 3 4 6: Drain D2 Internal Circuit 1 6 2 5 4 Start of commercial production 2001-01 2019 1 2019-06-10 Toshiba Electronic Devices & Storage Corporation TLP797GA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Peak forward current(100 s pulse, 100 pps) I 1 A FP LED Reverse voltage V 5 V R Diode power dissipation P 50 mW D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j 400 V Off-state output terminal voltage VOFF A connection 120 On-state current B connection I 120 mA ON C connection 240 A connection 1.2 On-state current derating B connection I /C 1.2 mA/C ON (Ta 25C) C connection 2.4 Detector A connection 453 Output power B connection P 345 mW O dissipation C connection 504 A connection 4.53 Output power dissipation B connection PO /C -3.45 mW /C derating (Ta 25C) C connection -5.04 Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Device considered a two-terminal device: Pins1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 320 V DD Forward current I 5 7.5 25 mA F On-state current I 120 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-10 Toshiba Electronic Devices & Storage Corporation