TCRT5000L

TCRT5000, TCRT5000L Vishay Semiconductors Reflective Optical Sensor with Transistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 10.2 x 5.8 x 7 Peak operating distance: 2.5 mm Operating range within > 20 % relative collector 19156 2 current: 0.2 mm to 15 mm Typical output current under test: I = 1 mA C Daylight blocking filter C A Emitter wavelength: 950 nm Lead (Pb)-free soldering released E C Compliant to RoHS directive 2002/95/EC and in Top view accordance to WEEE 2002/96/EC 19156 1 APPLICATIONS DESCRIPTION Position sensor for shaft encoder The TCRT5000 and TCRT5000L are reflective sensors which include an infrared emitter and phototransistor in a Detection of reflective material such as paper, IBM cards, leaded package which blocks visible light. The package magnetic tapes etc. includes two mounting clips. TCRT5000L is the long lead Limit switch for mechanical motions in VCR version. General purpose - wherever the space is limited PRODUCT SUMMARY DISTANCE FOR DISTANCE RANGE FOR TYPICAL OUTPUT DAYLIGHT (1) (2) PART NUMBER MAXIMUM CTR RELATIVE I > 20 % CURRENT UNDER TEST BLOCKING FILTER rel out (mm) (mm) (mA) INTEGRATED TCRT5000 2.5 0.2 to 15 1 Yes TCRT5000L 2.5 0.2 to 15 1 Yes Notes (1) CTR: current transfere ratio, I /I out in (2) Conditions like in table basic charactristics/sensors ORDERING INFORMATION (1) ORDERING CODE PACKAGING VOLUME REMARKS TCRT5000 Tube MOQ: 4500 pcs, 50 pcs/tube 3.5 mm lead length TCRT5000L Tube MOQ: 2400 pcs, 48 pcs/tube 15 mm lead length Note (1) MOQ: minimum order quantity (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT (EMITTER) Reverse voltage V 5V R Forward current I 60 mA F Forward surge current t 10 s I 3A p FSM Power dissipation T 25 C P 100 mW amb V Junction temperature T 100 C j Document Number: 83760 For technical questions, contact: sensorstechsupport vishay.com www.vishay.com Rev. 1.7, 17-Aug-09 1 TCRT5000, TCRT5000L Reflective Optical Sensor with Vishay Semiconductors Transistor Output (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT (DETECTOR) Collector emitter voltage V 70 V CEO Emitter collector voltage V 5V ECO Collector current I 100 mA C Power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j SENSOR Total power dissipation T 25 C P 200 mW amb tot Ambient temperature range T - 25 to + 85 C amb Storage temperature range T - 25 to + 100 C stg Soldering temperature 2 mm from case, t 10 s T 260 C sd Note (1) T = 25 C, unless otherwise specified amb ABSOLUTE MAXIMUM RATINGS 300 Coupled device 200 Phototransistor 100 IR - diode 0 25 50 75 100 0 T - Ambient Temperature (C) 95 11071 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature (1) BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT (EMITTER) Forward voltage I = 60 mA V 1.25 1.5 V F F Junction capacitance V = 0 V, f = 1 MHz C 17 pF R j Radiant intensity I = 60 mA, t = 20 ms I 21 mW/sr F p e Peak wavelength I = 100 mA 940 nm F P Virtual source diameter Method: 63 % encircled energy d 2.1 mm OUTPUT (DETECTOR) Collector emitter voltage I = 1 mA V 70 V C CEO Emitter collector voltage I = 100 A V7V e ECO Collector dark current V = 20 V, I = 0 A, E = 0 lx I 10 200 nA CE F CEO SENSOR V = 5 V, I = 10 mA, CE F (2) (3) Collector current I 0.5 1 2.1 mA C D = 12 mm Collector emitter saturation I = 10 mA, I = 0.1 mA, F C (2) (3) V 0.4 V CEsat voltage D = 12 mm Note (1) T = 25 C, unless otherwise specified amb (2) See figure 3 (3) Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005) www.vishay.com For technical questions, contact: sensorstechsupport vishay.com Document Number: 83760 2 Rev. 1.7, 17-Aug-09 P - Power Dissipation (mW)