VSLY3943 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES Package type: leaded Package form: T-1, clear epoxy Dimensions: 3 mm Peak wavelength: = 940 nm p High speed High radiant power High radiant intensity Angle of half intensity: = 17 94 8636 Low forward voltage Good spectral matching to Si photodetectors Material categorization: for definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 TM As part of the SurfLight portfolio, the VSLY3943 is a high APPLICATIONS speed infrared emitting diode based on surface emitter technology, molded in a blue-gray plastic package. Infrared remote control units Free air transmission systems Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSLY3943 70 17 940 5 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSLY3943 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 VSLY3943-MSZ Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 70 mA F Peak forward current t /T = 0.1, t = 100 s I 140 mA p p FM Surge forward current t = 100 s I 500 mA p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction-to-ambient J-STD-051, leads 7 mm, soldered on PCB R 300 K/W thJA Rev. 1.2, 10-Apr-18 Document Number: 84581 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSLY3943 www.vishay.com Vishay Semiconductors 80 120 70 100 60 80 50 40 60 30 R = 300 K/W R = 300 K/W thJA 40 thJA 20 20 10 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) amb T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 70 mA, t = 20 ms V -1.5 1.7 V F p F Forward voltage I = 500 mA, t = 100 s V -2.6 - V F p F Temperature coefficient of V I = 50 mA TK --0.7- mV/K F F VF Reverse current V = 5 V I Not designed for reverse operation A R R V = 0 V, f = 1 MHz, R Junction capacitance C -30 - pF J 2 E = 0 mW/cm I = 70 mA, t = 20 ms I 32 70 120 mW/sr F p e Radiant intensity I = 500 mA, t = 100 s I - 650 - mW/sr F p e Radiant power I = 70 mA, t = 20 ms e- 40 - mW F p Temperature coefficient I = 50 mA TK - -0.2 - %/K F e of radiant power Angle of half intensity - 17 - deg Peak wavelength I = 50 mA - 940 - nm F p Spectral bandwidth I = 70 mA -55 - nm F Temperature coefficient of l I = 70 mA TK -0.28- nm p F p Rise time I = 70 mA, 10 % to 90 % t -5 - ns F r Fall time I = 70 mA, 10 % to 90 % t -6 - ns F f Rev. 1.2, 10-Apr-18 Document Number: 84581 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F