End of Life May-2021 - Alternative Device: VSMB10941X01 VSMB11940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES Package type: surface-mount Package form: side view Dimensions (L x W x H in mm): 3 x 2 x 0.6 AEC-Q101 qualified Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity High speed Angle of half intensity: = 75 Low forward voltage DESCRIPTION Package matches with detector VEMD11940FX01 VSMB11940X01 is an infrared, 940 nm side looking emitting Floor life: 168 h, MSL 3, according to J-STD-020 diode in GaAlAs multi quantum well (MQW) technology with Lead (Pb)-free reflow soldering high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting Material categorization: for definitions of compliance (SMD). please see www.vishay.com/doc 99912 APPLICATIONS IR touch panel High power emitter for low space applications High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr), 20 mA () (nm) t (ns) e p r VSMB11940X01 1 75 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB11940X01 Tape and reel MOQ: 4000 pcs, 4000 pcs/reel side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 65 mA F Peak forward current t /T = 0.5, t = 100 s I 130 mA p p FM Surge forward current t = 100 s I 500 mA p FSM Power dissipation P 104 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 9, J-STD-020 T 260 C sd Thermal resistance junction / ambient JESD 51 R 580 K/W thJA Rev. 1.3, 29-Jan-2021 Document Number: 84193 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life May-2021 - Alternative Device: VSMB10941X01 VSMB11940X01 www.vishay.com Vishay Semiconductors 120 80 70 100 60 80 50 60 40 30 R = 580 K/W R = 580 K/W 40 thJA thJA 20 20 10 0 0 0 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 20 mA, t = 20 ms V 1.11.241.5 V F p F Forward voltage I = 65 mA, t = 20 ms V -1.35- V F p F I = 500 mA, t = 100 s V -1.8 - V F p F Temperature coefficient of V I = 1 mA TK --1.5- mV/K F F VF Reverse current V = 5 V I - - 10 A R R V = 0 V, f = 1 MHz, R Junction capacitance C -21 - pF J 2 E = 0 mW/cm I = 20 mA, t = 20 ms I 0.5 1.0 1.5 mW/sr F p e Radiant intensity I = 65 mA, t = 20 ms I -3.2 - mW/sr F p e I = 500 mA, t = 100 s I -20 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms e- 35 - mW F p Temperature coefficient of radiant power I = 100 mA TK - -0.47 - %/K F e Angle of half intensity - horizontal - 77.5 - h Angle of half intensity - vertical - 72.5 - v Peak wavelength I = 30 mA -940 - nm F p Spectral bandwidth I = 30 mA -25 - nm F Temperature coefficient of I = 30 mA TK -0.3 - nm p F p Rise time I = 100 mA, 20 % to 80 % t -15 - ns F r Fall time I = 100 mA, 20 % to 80 % t -15 - ns F f Rev. 1.3, 29-Jan-2021 Document Number: 84193 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F