VSMB14942 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW FEATURES Package type: surface mount Package form: side view Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2 Peak wavelength: = 940 nm p High reliability High radiant power Very high radiant intensity Angle of half intensity: = 16 Suitable for high pulse current operation DESCRIPTION Floor life: 168 h, MSL 3, according to J-STD-020 VSMB14942 is an infrared, 940 nm, side looking emitting Material categorization: for definitions of compliance diode in GaAlAs multi quantum well (MQW) technology please see www.vishay.com/doc 99912 with high radiant power and high speed, molded in clear, untinted PCB based package (with lens) for surface mounting (SMD). APPLICATIONS Emitter for remote control IR touch panels Photointerrupters Optical switch PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMB14942 26 16 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB14942 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature acc. figure 10, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, soldered on PCB R 400 K/W thJA Rev. 1.1, 12-Aug-15 Document Number: 84223 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMB14942 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 100 60 80 R = 400 K/W R = 400 K/W 60 40 thJA thJA 40 20 20 0 0 0 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 20 mA, t = 20 ms V 1.01.181.4 V F p F Forward voltage I = 100 mA, t = 20 ms V - 1.28 1.6 V F p F I = 1 A, t = 100 s V -1.83- V F p F Temperature coefficient of V I = 100 mA TK - -0.98 - mV/K F F VF Reverse current V = 5 V I - - 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C - 116 - pF R J I = 20 mA, t = 20 ms I 2.8 5.5 8.5 mW/sr F p e Radiant intensity I = 100 mA, t = 20 ms I -27- mW/sr F p e I = 1 A, t = 100 s I - 210 - mW/sr F p e Radiant power I = 70 mA, t = 20 ms -28- mW F p e Temperature coefficient of radiant power I = 20 mA TK - -0.32 - %/K F e Angle of half intensity - 16 - deg Peak wavelength I = 70 mA 920 940 960 nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of I = 30 mA TK -0.30- nm/K p F p Rise time I = 100 mA, 20 % to 80 % t -15- ns F r Fall time I = 100 mA, 20 % to 80 % t -15- ns F f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.60 1.55 I = 100 mA F t = 100 s p tp = 20 ms 1.50 1.45 100 1.40 1.35 1.30 1.25 10 1.20 1.15 1.10 1.05 1 1.00 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -60 -40 -20 0 20 40 60 80 100 V - Forward Voltage (V) T - Ambient Temperature (C) F amb Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature Rev. 1.1, 12-Aug-15 Document Number: 84223 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) I - Forward Current (mA) V F V - Forward Voltage (V) I - Forward Current (mA) F F