VSMB1940ITX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified Enhanced operating temperature range: -40 C to +105 C Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity High speed 21531 Angle of half sensitivity: = 60 Low forward voltage Suitable for high pulse current operation 0805 standard surface-mountable package DESCRIPTION Floor life: 72 h, MSL 4, according to J-STD-020 VSMB1940ITX01 is an infrared, 940 nm emitting diode in Lead (Pb)-free reflow soldering GaAlAs double hetero technology with high radiant power Material categorization: for definitions of compliance and high speed, molded in clear, untinted 0805 plastic please see www.vishay.com/doc 99912 package for surface mounting (SMD). APPLICATIONS IR emitter for automotive applications High power emitter for low space applications High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMB1940ITX01 6 60 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB1940ITX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 110 C j Operating temperature range T -40 to +105 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow profile Fig. 9 T 260 C sd Thermal resistance junction / ambient JESD 51 R 270 K/W thJA Rev. 1.1, 30-Jun-16 Document Number: 84258 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMB1940ITX01 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 100 60 80 60 R = 270 K/W 40 R = 270 K/W thJA thJA 40 20 20 0 0 0 153045607590 105120 0 153045607590 105120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.15 1.35 1.6 V F p F Forward voltage I = 1 A, t = 100 s V -2.2 - V F p F I = 1 mA TK --1.5- mV/K F VF Temperature coefficient of V F I = 100 mA TK --1.1- mV/K F VF Reverse current V = 5 V I - - 10 A R R V = 0 V, f = 1 MHz, R Junction capacitance C -70 - pF 2 J E = 0 mW/cm I = 100 mA, t = 20 ms I 36 12 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I -60 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms e- 40 - mW F p I = 1 mA TK - -1.1 - %/K F e Temperature coefficient of radiant power I = 100 mA TK - -0.51 - %/K F e Angle of half intensity - 60 - deg Peak wavelength I = 30 mA - 940 - nm F p Spectral bandwidth I = 30 mA -25 - nm F Temperature coefficient of I = 30 mA TK -0.25- nm p F p Rise time I = 100 mA, 20 % to 80 % t -15 - ns F r Fall time I = 100 mA, 20 % to 80 % t -15 - ns F f Virtual source diameter d - 0.5 - mm Rev. 1.1, 30-Jun-16 Document Number: 84258 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F