IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses nxp.com use salesaddresses ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) NXP Semiconductors N.V. year . All rights reserved becomes WeEn Semiconductors Co., Ltd. year . All rights reserved If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses ween-semi.com). Thank you for your cooperation and understanding, WeEn SemiconductorsZ0107MN 4Q Triac 26 August 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface- mountable plastic package intended for applications requiring direct interfacing to logic level ICs and low power gate drivers. 2. Features and benefits Direct interfacing to logic level ICs Direct interfacing to low power gate drive circuits High blocking voltage capability Planar passivated for voltage ruggedness and reliability Surface-mountable package Triggering in all four quadrants Very sensitive gate 3. Applications General purpose low power motor control Home appliances Industrial process control Low power AC Fan controllers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 8 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p I RMS on-state current full sine wave T 105 C Fig. 1 - - 1 A T(RMS) sp Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 5 mA GT D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2+ G- - - 5 mA D T T = 25 C Fig. 9 j Scan or click this QR code to view the latest information for this product SOT223