Thyristors Surface Mount 600-800V > 2N6344A, 2N6348A, 2N6349A Pb 2N6344A, 2N6348A, 2N6349A Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features Blocking Voltage to 800 V Gate Triggering Guaranteed in all Four All Diffused and Glass Quadrants Passivated Junctions for Greater Parameter For 400 Hz Operation, Uniformity and Stability Consult Factory Small, Rugged, 8.0 A Devices Available as Thermowatt Construction 2N6344 thru 2N6349 for Low Thermal PbFree Package is Resistance, High Heat Available Dissipation and Durability Pin Out Functional Diagram CASE 221A STYLE 4 1 2 Additional Information Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/24/19Thyristors Surface Mount 600-800V > 2N6344A, 2N6348A, 2N6349A Maximum Ratings and Thermal Characteristics (T = 25C unless otherwise noted) J Rating Symbol Value Unit 2N6344A, 600 *Peak Repetitive Off-State Voltage (Note 1) V , 2N6348A DRM V (T = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) V J RRM 2N6349A 800 (T =+80C) 12 *On-State RMS Current C I A T (RMS) (Full Cycle Sine Wave 50 to 60 Hz) (T =+90C) 6.0 C *Peak NonRepetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, T = +80C) I 100 A C TSM Preceded and followed by rated current 2 Circuit Fusing Considerations (t = 8.3 ms) I t 59 As *Peak Gate Power (T = +80C, Pulse Width = 2 s) P 20 W C GM *Average Gate Power (T = +80C, t = 8.3 ms) P 0.5 W C G(AV) *Peak Gate Current (T = +80C, Pulse Width = 2.0 s) I 2.0 A C GM *Peak Gate Voltage (T = +80C, Pulse Width = 2.0 s) V 10 V C GM *Operating Junction Temperature Range T -40 to +150 C J *Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. * Indicates JEDEC Registered Data. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the DRM RRM devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 2.0 C/W 8JC Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Indicates JEDEC Registered Data. Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit - - 1.0 A *Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 100C I D DRM RRM J RRM - - 2.0 mA 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/24/19