Product Information

WSB5558N-2/TR

WSB5558N-2/TR electronic component of Will Semiconductor

Datasheet
30V Single 450mV@100mA 100mA DFN1006-2L Schottky Barrier Diodes (SBD) ROHS

Manufacturer: Will Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0447 ea
Line Total: USD 0.45

11950 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
7158 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 10
Multiples : 10

Stock Image

WSB5558N-2/TR
Will Semiconductor

10 : USD 0.057
100 : USD 0.0464
300 : USD 0.0413
1000 : USD 0.0372
5000 : USD 0.0341
10000 : USD 0.0327

     
Manufacturer
Product Category
Package
Rohs
Reverse Leakage Current Ir
Reverse Voltage Vr
Diode Configuration
Forward Voltage Vf@If
Average Rectified Current Io
LoadingGif

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The WSB5558N-2/TR chip is a 30V Single, 450mV@100mA, 100mA DFN1006-2L Schottky Barrier Diode (SBD) ROHS manufactured by Will Semiconductor. It is a power diode that allows current to flow in one direction and blocks it in the opposite direction. It has excellent thermal stability and low forward voltage drop. It has a low thermal resistance and is suitable for low-loss switching and rectification applications. It is built with RoHS compliant materials and is lead-free. It has an operating temperature range of -65 °C to +175 °C and can handle surge currents up to 2A. It also has a high breakdown voltage and fast switching speeds.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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