Product Information

WPT2N32-6/TR

WPT2N32-6/TR electronic component of Will Semiconductor

Datasheet
MOSFET N Trench 20V 800mA 860mV @ 250uA 600 mΩ @ 550mA,4.5V DFN2x2-6L RoHS
Manufacturer: Will Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1429 ea
Line Total: USD 0.71

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5

Stock Image

WPT2N32-6/TR
Will Semiconductor

5 : USD 0.1429
50 : USD 0.1188
150 : USD 0.1067
500 : USD 0.0976
3000 : USD 0.0904
6000 : USD 0.0868

0 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5

Stock Image

WPT2N32-6/TR
Will Semiconductor

5 : USD 0.0976
50 : USD 0.0732
150 : USD 0.0687
500 : USD 0.0643
2500 : USD 0.0623
5000 : USD 0.0613

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
LoadingGif

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Additional Infomation About Product

The WPT2N32-6/TR is a MOSFET N-channel transistor manufactured by Will Semiconductor. It is a trench-structure device that operates at 20V with a current rating of 800mA and a drain-source breakdown voltage of 860mV. It has a low on-resistance of 600 mO at 550mA and a threshold voltage of 4.5V. This transistor is packaged in a DFN2x2-6L RoHS-compliant package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semiconductor may also be referenced as

Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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