X-On Electronics has gained recognition as a prominent supplier of W97AH2KBVX2I dram across the USA, India, Europe, Australia, and various other global locations. W97AH2KBVX2I dram are a product manufactured by Winbond. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

W97AH2KBVX2I Winbond

W97AH2KBVX2I electronic component of Winbond
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Part No.W97AH2KBVX2I
Manufacturer: Winbond
Category:DRAM
Description: DRAM 1Gb LPDDR2, x32, 400MHz, -40 ~ 85C
Datasheet: W97AH2KBVX2I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 4.6652
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 7.3037
10 : USD 5.0076
25 : USD 4.914
50 : USD 4.8789
100 : USD 4.5396
250 : USD 4.5396
500 : USD 4.4109
1000 : USD 4.3407
5000 : USD 4.1535
N/A

Obsolete
   
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W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................................................ 6 2. FEATURES .................................................................................................................................................................... 6 3. ORDER INFORMATION ................................................................................................................................................ 7 4. PIN CONFIGURATION .................................................................................................................................................. 8 4.1 134 Ball VFBGA ............................................................................................................................................................. 8 4.2 168 Ball WFBGA ............................................................................................................................................................ 9 5. PIN DESCRIPTION ..................................................................................................................................................... 10 5.1 Basic Functionality ....................................................................................................................................................... 10 5.2 Addressing Table ......................................................................................................................................................... 11 6. BLOCK DIAGRAM ....................................................................................................................................................... 12 7. FUNCTIONAL DESCRIPTION ..................................................................................................................................... 13 7.1 Simplified LPDDR2 State Diagram .............................................................................................................................. 13 7.1.1 Simplified LPDDR2 Bus Interface State Diagram ......................................................................................................... 14 7.2 Power-up, Initialization, and Power-Off ........................................................................................................................ 15 7.2.1 Power Ramp and Device Initialization .......................................................................................................................... 15 7.2.2 Timing Parameters for Initialization .............................................................................................................................. 17 7.2.3 Power Ramp and Initialization Sequence .................................................................................................................... 17 7.2.4 Initialization after Reset (without Power ramp) ............................................................................................................. 18 7.2.5 Power-off Sequence .................................................................................................................................................... 18 7.2.6 Timing Parameters Power-Off ..................................................................................................................................... 18 7.2.7 Uncontrolled Power-Off Sequence .............................................................................................................................. 18 7.3 Mode Register Definition .............................................................................................................................................. 19 7.3.1 Mode Register Assignment and Definition ................................................................................................................... 19 7.3.1.1 Mode Register Assignment ............................................................................................................................... 19 7.3.2 MR0 Device Information (MA 7:0 = 00H) ................................................................................................................... 20 7.3.3 MR1 Device Feature 1 (MA 7:0 = 01H) ...................................................................................................................... 20 7.3.3.1 Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC) .............................................. 21 7.3.3.2 Non Wrap Restrictions ...................................................................................................................................... 21 7.3.4 MR2 Device Feature 2 (MA 7:0 = 02H) ...................................................................................................................... 22 7.3.5 MR3 I/O Configuration 1 (MA 7:0 = 03H) ................................................................................................................... 22 7.3.6 MR4 Device Temperature (MA 7:0 = 04H) ................................................................................................................. 22 7.3.7 MR5 Basic Configuration 1 (MA 7:0 = 05H) ............................................................................................................... 23 7.3.8 MR6 Basic Configuration 2 (MA 7:0 = 06H) ............................................................................................................... 23 7.3.9 MR7 Basic Configuration 3 (MA 7:0 = 07H) ............................................................................................................... 23 7.3.10 MR8 Basic Configuration 4 (MA 7:0 = 08H) ............................................................................................................... 23 7.3.11 MR9 Test Mode (MA 7:0 = 09H) ................................................................................................................................ 23 7.3.12 MR10 Calibration (MA 7:0 = 0AH) ............................................................................................................................. 24 7.3.13 MR16 PASR Bank Mask (MA 7:0 = 10H) .................................................................................................................. 24 7.3.14 MR17 PASR Segment Mask (MA 7:0 = 11H) ............................................................................................................ 25 7.3.15 MR32 DQ Calibration Pattern A (MA 7:0 = 20H) ........................................................................................................ 25 7.3.16 MR40 DQ Calibration Pattern B (MA 7:0 = 28H) ........................................................................................................ 25 7.3.17 MR63 Reset (MA 7:0 = 3FH): MRW only ................................................................................................................... 25 7.4 Command Definitions and Timing Diagrams ................................................................................................................ 26 7.4.1 Activate Command ...................................................................................................................................................... 26 7.4.1.1 Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 26 7.4.1.2 tFAW Timing ..................................................................................................................................................... 27 7.4.1.3 Command Input Setup and Hold Timing............................................................................................................ 27 7.4.1.4 CKE Input Setup and Hold Timing .................................................................................................................... 28 7.4.2 Read and Write Access Modes.................................................................................................................................... 28 7.4.3 Burst Read Command ................................................................................................................................................. 28 7.4.3.1 Data Output (Read) Timing (tDQSCKmax) ........................................................................................................ 29 7.4.3.2 Data Output (Read) Timing (tDQSCKmin) ......................................................................................................... 30 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 1 - W97AH6KB / W97AH2KB 7.4.3.3 Burst Read: RL = 5, BL = 4, tDQSCK > tCK ...................................................................................................... 30 7.4.3.4 Burst Read: RL = 3, BL = 8, tDQSCK < tCK ...................................................................................................... 31 7.4.3.5 LPDDR2: tDQSCKDL Timing ............................................................................................................................ 31 7.4.3.6 LPDDR2: tDQSCKDM Timing ........................................................................................................................... 32 7.4.3.7 LPDDR2: tDQSCKDS Timing............................................................................................................................ 32 7.4.3.8 Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4 ............................................................................ 33 7.4.3.9 Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 33 7.4.4 Reads Interrupted by a Read ....................................................................................................................................... 34 7.4.4.1 Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2 ................................................................................... 34 7.4.5 Burst Write Operation .................................................................................................................................................. 34 7.4.5.1 Data Input (Write) Timing .................................................................................................................................. 35 7.4.5.2 Burst Write: WL = 1, BL= 4 ............................................................................................................................... 35 7.4.5.3 Burst Write Followed by Burst Read: RL = 3, WL= 1, BL= 4 .............................................................................. 36 7.4.5.4 Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 36 7.4.6 Writes Interrupted by a Write ....................................................................................................................................... 37 7.4.6.1 Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 37 7.4.7 Burst Terminate ........................................................................................................................................................... 37 7.4.7.1 Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 38 7.4.7.2 Burst Read Truncated by BST: RL = 3, BL = 16 ................................................................................................ 38 7.4.8 Write Data Mask .......................................................................................................................................................... 39 7.4.8.1 Write Data Mask Timing .................................................................................................................................... 39 7.4.9 Precharge Operation ................................................................................................................................................... 40 7.4.9.1 Bank Selection for Precharge by Address Bits .................................................................................................. 40 7.4.10 Burst Read Operation Followed by Precharge ............................................................................................................. 40 7.4.10.1 Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 41 7.4.10.2 Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 41 7.4.11 Burst Write Followed by Precharge ............................................................................................................................. 42 7.4.11.1 Burst Write Followed by Precharge: WL = 1, BL = 4 .......................................................................................... 42 7.4.12 Auto Precharge Operation ........................................................................................................................................... 43 7.4.13 Burst Read with Auto-Precharge ................................................................................................................................. 43 7.4.13.1 Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 43 7.4.14 Burst Write with Auto-Precharge .................................................................................................................................. 44 7.4.14.1 Burst Write with Auto-Precharge: WL = 1, BL = 4 .............................................................................................. 44 7.4.14.2 Precharge & Auto Precharge Clarification ......................................................................................................... 45 7.4.15 Refresh Command ...................................................................................................................................................... 46 7.4.15.1 Command Scheduling Separations Related to Refresh ..................................................................................... 47 7.4.16 LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 47 7.4.16.1 Definition of tSRF .............................................................................................................................................. 48 7.4.16.2 Regular, Distributed Refresh Pattern ................................................................................................................. 50 7.4.16.3 Allowable Transition from Repetitive Burst Refresh ........................................................................................... 50 7.4.16.4 NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 51 7.4.16.5 Recommended Self-Refresh Entry and Exit ...................................................................................................... 51 7.4.16.6 All Bank Refresh Operation ............................................................................................................................... 52 7.4.16.7 Per Bank Refresh Operation ............................................................................................................................. 52 7.4.17 Self Refresh Operation ................................................................................................................................................ 53 7.4.18 Partial Array Self-Refresh: Bank Masking .................................................................................................................... 54 7.4.19 Partial Array Self-Refresh: Segment Masking .............................................................................................................. 54 7.4.20 Mode Register Read Command .................................................................................................................................. 55 7.4.20.1 Mode Register Read Timing Example: RL = 3, tMRR = 2 .................................................................................. 56 7.4.20.2 Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 57 7.4.20.3 Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 57 7.4.21 Temperature Sensor.................................................................................................................................................... 58 7.4.21.1 Temperature Sensor Timing ............................................................................................................................. 59 7.4.21.2 DQ Calibration .................................................................................................................................................. 59 7.4.21.3 MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 60 7.4.22 Mode Register Write Command................................................................................................................................... 61 Publication Release Date: Apr. 10, 2018 Revision: A01-002 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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