SI2312CDS-T1-GE3 MOSFETs by VBsemi Elec – High-Efficiency Power Control
The MOSFETs SI2312CDS-T1-GE3 by VBsemi Elec are reliable Semiconductors designed for efficient switching and low-loss performance. As part of the Discrete Semiconductors family, these Transistors under the MOSFETs category deliver compact design, high current handling, and fast switching for modern applications. With their small package size and low RDS(on), they are widely used in battery-powered devices, DC-DC converters, and portable electronics.
This article highlights the technical specifications, key features, applications, pin configuration, real-world use case, datasheet link, and why buying from XON Electronics is the best choice.
1. Technical Specifications of SI2312CDS-T1-GE3
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Manufacturer: VBsemi Elec
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Part Number: SI2312CDS-T1-GE3
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Type: MOSFETs
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Category: Semiconductors, Discrete Semiconductors, Transistors
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Polarity: P-Channel
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Drain-to-Source Voltage (Vds): –20V
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Continuous Drain Current (Id): –3.1A
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RDS(on): 75mO typical @ Vgs = –4.5V
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Package: SOT-23 (surface-mount)
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Applications: Power switching, battery management, DC-DC converters
2. Key Features of SI2312CDS-T1-GE3
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Low RDS(on) for reduced conduction loss
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P-Channel design for simplified switching control
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Compact SOT-23 package saves PCB space
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Reliable thermal and electrical performance
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High switching speed for efficient operation
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Suitable for low-voltage and portable applications
The SI2312CDS-T1-GE3 MOSFETs are highly efficient components in the Transistors and MOSFETs category.
3. Applications of SI2312CDS-T1-GE3
The SI2312CDS-T1-GE3 MOSFETs by VBsemi Elec are commonly used in:
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Battery management systems
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DC-DC converters and switching regulators
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Load switching for portable devices
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IoT and industrial low-power circuits
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Consumer electronics power management
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Protection circuits in handheld devices
4. Pin Configuration and Connection Overview
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Drain (D): Load connection
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Source (S): Power input
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Gate (G): Control voltage input
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Optimized SOT-23 package for small form factor designs.
5. Use Case Scenario: Battery-Powered IoT Devices
Scenario: A company designing IoT-enabled sensors needed compact MOSFETs for power management.
Problem: Existing MOSFETs consumed too much board space and caused efficiency losses.
Solution: The SI2312CDS-T1-GE3 MOSFETs delivered low RDS(on), efficient switching, and a compact package.
Result: Improved energy efficiency, longer battery runtime, and smaller device size.
6. Download Datasheet for SI2312CDS-T1-GE3
Download SI2312CDS-T1-GE3 Datasheet from XON Electronics
7. Why Buy from XON Electronics?
At XON Electronics, we ensure genuine VBsemi Elec components including the SI2312CDS-T1-GE3 with:
- 100% Authentic MOSFETs
- Global shipping – USA, India, Australia, Europe & more
- OEM and distributor-friendly pricing
- Expert technical support
- Secure and hassle-free online transactions
8. Also Available from Other Manufacturers
Along with VBsemi Elec, XON Electronics offers MOSFETs from:
This ensures versatile sourcing of high-performance Discrete Semiconductors.
9. FAQs – SI2312CDS-T1-GE3 MOSFETs
Q1. What is the polarity of SI2312CDS-T1-GE3?
It is a P-Channel MOSFET.
Q2. What is the maximum drain current?
It supports –3.1A continuous current.
Q3. What is the RDS(on)?
It offers a low 75mO for efficiency.
Q4. Where is it typically used?
In DC-DC converters, battery protection, and portable electronics.
Q5. Where can I buy SI2312CDS-T1-GE3?
From www.xonelec.com with worldwide delivery.
Conclusion
The SI2312CDS-T1-GE3 MOSFETs by VBsemi Elec deliver efficiency, compact size, and high performance for portable and power-sensitive applications. Belonging to the Semiconductors, Discrete Semiconductors, Transistors, MOSFETs family, they are ideal for battery systems, converters, and switching circuits.
Buy now at XON Electronics for genuine VBsemi Elec components with global shipping.