About IGBT Transistors

Xiner IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SP25N135T


IGBTs Field Stop 1350V 25A TO-3PN RoHS
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USD 1.3612

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XNS40N60T


IGBTs Field Stop 600V 40A TO-247 RoHS
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USD 1.5206

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XNS25N120T


TO-247-3 IGBTs ROHS
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USD 1.6108

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XNL40N120T


IGBTs Field Stop 1200V 40A TO-264 RoHS
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USD 2.5322

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XNS40N120T


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

XINER Availability : 0
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USD 2.5322

Multiples of: 1

                
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