An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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    GN2470K4-G


    IGBT Transistors 700V 3.5A IGBT
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    Microchip 7435
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    between Fri. 06 Oct to Thu. 12 Oct
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    USD 1.09

    Multiples of: 500

    Single700 V +/- 20 V    TO - 252 (DPAK) - 3ReelSiSmd/Smt2.5 W- 55 C+ 150 C 
    IXSH20N60B2D1


    IGBT Transistors 20 Amps 600V 2.5 Rds
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    IXYS 2495
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    between Fri. 06 Oct to Thu. 12 Oct
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    USD 4.7497

    Multiples of: 1

    Single600 V2.5 V+/- 20 V +/- 100 nA190 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh20n60
    748152A


    IRG4PC30W SEMICONDUCTORS
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    Infineon 200
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    by Mon. 02 Oct
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    USD 1.9209

    Multiples of: 1

    Single600 V2.7 V+/- 20 V23 A   TO - 247 - 3Tube Through Hole100 W- 55 C  
    HGT1S12N60A4DS


    600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfas
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    ON Semiconductor 147
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    USD 3.0712

    Multiples of: 1

                    
    IXSP20N60B2D1


    IGBT Transistors 20 Amps 600V 2.5 Rds
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    IXYS 130
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    USD 4.2394

    Multiples of: 1

    Single600 V2.5 V+/- 20 V +/- 100 nA190 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CIxsp20n60
    FGA15N120FTDTU


    IGBT 1200V 15A TO-3PN ELECTRONICS PART
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    ON Semiconductor 20
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    by Mon. 02 Oct
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    USD 3.7385

    Multiples of: 1

    Single1200 V +/- 25 V    TO - 3PN - 3Tube Through Hole - 55 C+ 150 CFga15n120ftdtu
    IRGB4607DPBF


    IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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    Infineon 2
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    USD 0.7343

    Multiples of: 1

    Single600 V2.2 V+/- 20 V11 A100 nA58 W TO - 220AB - 3BulkSiThrough Hole58 W- 40 C+ 175 C 
    NTE3311


    Transistor: IGBT; 600V; 25A; 150W; TO3P
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    NTE 2
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    USD 11.4883

    Multiples of: 1

          150 W         
    IXyH100N65C3


    Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
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    IXYS 1
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    by Mon. 02 Oct
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    USD 11.8295

    Multiples of: 1

          830 W   Genx3, Planar, Xpt     
    IRG4IBC30KDPBF


    Transistor: IGBT; 600V; 17A; 45W; TO220AB
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    Infineon 1
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    USD 2.3125

    Multiples of: 1

    Single600 V2.7 V+/- 20 V17 A 45 W TO - 220 - 3 FPTube Through Hole - 55 C