About MOSFET

Central Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CDM7-650 TR13


MOSFET 650V N-Ch PFC FET 30Vgs 5.0nC 1.35Ohm
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Central Semiconductor 2139
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USD 0.7087
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7 A650 V1.35 OhmsN - Channel 2 V- 55 C+ 150 C140 WSmd/SmtDPAK - 4ReelSi1 Channel30 V16.8 nCEnhancement  
CDM7-600LR TR13


MOSFET 600V N-Ch PFC FET 0.53Ohm 30Vgs 60W
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Central Semiconductor 1964
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USD 0.72
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7 A600 V580 mOhmsN - Channel 2 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel30 V14.5 nCEnhancement Ultramos
CMPDM7002AHC TR


MOSFET Small Signal Mosfet N-Channel
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Central Semiconductor 1749
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USD 0.1466
Multiples of: 3000

1 A60 V150 mOhmsN - Channel 1.2 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel20 V2.3 nCEnhancement  
CEDM7004 TR


Central Semiconductor MOSFET 30V N-Ch Enh FET 8.0Vgs 1.78ID 100mW
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Central Semiconductor 1599
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USD 0.2435
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1.78 A30 V280 mOhmsN - Channel 1 V- 65 C+ 150 C100 mWSmd/SmtSOT - 883LReelSi1 Channel8 V792 pCEnhancement  
CXDM6053N TR


MOSFET 60Vds N-Ch Enh FET 20Vgs 5.3A 1.2W
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Central Semiconductor 1593
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USD 0.4434
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5.3 A60 V52 mOhmsN - Channel  - 55 C+ 150 C1.2 WSmd/SmtSOT - 89Cut TapeSi1 Channel20 V8.8 nCEnhancement  
CMUDM8004 TR


MOSFET SMD-Small Signal P-Channel Mosfet
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Central Semiconductor 1304
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USD 0.3024
Multiples of: 1

450 mA30 V1 OhmsP - Channel 1 V- 65 C+ 150 C250 mWSmd/SmtSOT - 523ReelSi1 Channel8 V880 pCEnhancement Ultramini
CXDM1002N TR


Central Semiconductor MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
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Central Semiconductor 958
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USD 0.4882
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2 A100 V140 mOhmsN - Channel 2.1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 89 - 3ReelSi1 Channel20 V6 nCEnhancement  
CDM2205-800FP SL


MOSFET N-Ch 800V PFC FET 17.nC 2.2Ohm 48W
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Central Semiconductor 943
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USD 0.819
Multiples of: 1

5 A800 V2.7 OhmsN - Channel 2 V- 55 C+ 150 C48 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V17.4 nCEnhancement Ultramos
CXDM3069N TR


MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A
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Central Semiconductor 866
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USD 0.2763
Multiples of: 1

6.9 A30 V50 mOhmsN - Channel  - 55 C+ 150 C1.2 WSmd/SmtSOT - 89Cut TapeSi1 Channel12 V11 nCEnhancement  
CDM2206-800LR SL


MOSFET N-Ch 800V LR FET 6.0A 2.8nC 0.8Ohm
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Central Semiconductor 646
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USD 0.9098
Multiples of: 1

6 A800 V800 mOhmsN - Channel 2 V- 55 C+ 150 C110 WSmd/SmtTO - 220 - 3TubeSi1 Channel30 V24.3 nCEnhancement Ultramos
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