About MOSFET

Advanced Linear Devices MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ALD1103PBL


Mosfet Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Through Hole 14-PDIP
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Advanced Linear Devices 95
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USD 5.616
Multiples of: 1

40 mA , - 16 mA10.6 v , - 10.6 V75 Ohms , 270 OhmsN - Channel, P - Channel 400 mV0 C+ 70 C500 mWThrough HolePDIP - 14TubeSi4 Channel13.2 V Enhancement  
ALD1101ASAL


MOSFET Dual N-Channel Pair
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Advanced Linear Devices 92
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USD 5.9607
Multiples of: 1

40 mA12 V50 Ohms , 50 OhmsN - Channel 400 mV0 C+ 70 C500 mW (1/2 w)Smd/SmtSOIC - 8TubeSi2 Channel10.6 V Enhancement  
ALD910027SAL


MOSFET Dual MOSFET ARRAY Vt=2.70V
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Advanced Linear Devices 82
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USD 3.9375
Multiples of: 1

100 pA10.6 V23 OhmsN - Channel2.3 V2.7 V0 C+ 70 C500 mWSmd/SmtSOIC - 8TubeSi2 Channel10.6 V Enhancement Sab
ALD110800APCL


MOSFET Quad EPAD(R) N-Ch
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Advanced Linear Devices 51
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USD 6.0214
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12 mA10 V500 OhmsN - Channel 10 mV0 C+ 70 C500 mW (1/2 w)Through HolePDIP - 16TubeSi4 Channel10.6 V Depletion  
ALD1116SAL


Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Surface Mount 8-SOIC
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Advanced Linear Devices 48
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USD 2.277
Multiples of: 1

4.8 mA12 V350 OhmsN - Channel, P - Channel 400 mV0 C+ 70 C500 mWSmd/SmtSOIC - 8TubeSi4 Channel13.2 V Enhancement  
ALD1115SAL


MOSFET Comp N-Channel & P-Channel
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Advanced Linear Devices 48
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USD 2.9441
Multiples of: 1

4.8 mA , 2 mA10 V350 Ohms , 1.2 kOhmsN And P - Channel 400 mV0 C+ 70 C500 mW (1/2 w)Smd/SmtSOIC - 8TubeSi2 Channel10.6 V Enhancement  
ALD810022SCL


MOSFET Quad SAB MOSFET ARRAY VT=2.20V
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Advanced Linear Devices 48
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USD 3.082
Multiples of: 1

80 mA10.6 V-N - Channel 2.22 V0 C+ 70 C500 mWSmd/SmtSOIC - 16TubeSi4 Channel10.6 V-Enhancement  
ALD810025SCL


MOSFET Quad MOSFET ARRAY Vt=2.50V
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Advanced Linear Devices 48
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USD 3.216
Multiples of: 1

100 pA10.6 V21 OhmsN - Channel2.1 V2.5 V0 C+ 70 C500 mWSmd/SmtSOIC - 16TubeSi4 Channel10.6 V Enhancement Sab
ALD212900SAL


MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
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Advanced Linear Devices 48
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USD 3.696
Multiples of: 1

79 mA10 V14 OhmsN - Channel 20 mV0 C+ 70 C500 mWSmd/SmtSOIC - 8TubeSi2 Channel10.6 V Depletion  
ALD212900ASAL


MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Advanced Linear Devices 48
Ships to you
between Mon. 20 May to Wed. 22 May Calender.png

USD 4.452
Multiples of: 1

79 mA10 V14 OhmsN - Channel 10 mV0 C+ 70 C500 mWSmd/SmtSOIC - 8TubeSi2 Channel10.6 V Depletion  
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