Product Information

ALD1101ASAL

ALD1101ASAL electronic component of Advanced Linear Devices

Datasheet
MOSFET Dual N-Channel Pair

Manufacturer: Advanced Linear Devices
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.7163 ea
Line Total: USD 10.7163

92 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
92 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

Stock Image

ALD1101ASAL
Advanced Linear Devices

1 : USD 9.223
10 : USD 8.648
50 : USD 7.8775
100 : USD 6.877
250 : USD 6.831
500 : USD 6.233
1000 : USD 5.8305
5000 : USD 5.819

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Product
Series
Transistor Type
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
ALD1721GPAL electronic component of Advanced Linear Devices ALD1721GPAL

Precision Amplifiers CMOS OP Amp .15mV, 600mW
Stock : 0

EHJ3C electronic component of Advanced Linear Devices EHJ3C

Ribbon Cables / IDC Cables 2 wire 6 in Inp Cble EH4200 Booster Mod
Stock : 0

ALD1115PAL electronic component of Advanced Linear Devices ALD1115PAL

MOSFET Comp N-Channel & P-Channel
Stock : 2

ALD1117PAL electronic component of Advanced Linear Devices ALD1117PAL

MOSFET Dual P-Channel Array
Stock : 4

ALD810021SCL electronic component of Advanced Linear Devices ALD810021SCL

Advanced Linear Devices MOSFET Quad SAB MOSFET ARRAY VT=2.10V
Stock : 4

EH4205/EH4295KIT electronic component of Advanced Linear Devices EH4205/EH4295KIT

Power Management IC Development Tools Ev Kt EH4205, EH4295
Stock : 0

ALD114904SAL electronic component of Advanced Linear Devices ALD114904SAL

MOSFET Dual EPAD(R) N-Ch
Stock : 2

SABMBOVP217 electronic component of Advanced Linear Devices SABMBOVP217

Power Management IC Development Tools 2-CHANNEL OVP SAB PCB w ALD910017SALI
Stock : 4

SABMBOVP218 electronic component of Advanced Linear Devices SABMBOVP218

Power Management IC Development Tools 2-CHANNEL OVP SAB PCB w ALD910018SALI
Stock : 2

SABMBOVP223 electronic component of Advanced Linear Devices SABMBOVP223

Power Management IC Development Tools 2-CHANNEL OVP SAB PCB w ALD910023SALI
Stock : 0

Image Description
BS170_D27Z electronic component of ON Semiconductor BS170_D27Z

Fairchild Semiconductor MOSFET N-Ch Enhancement Mode Field Effect
Stock : 2000

NTTFS4928NTAG electronic component of ON Semiconductor NTTFS4928NTAG

N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1

FDY3000NZ electronic component of ON Semiconductor FDY3000NZ

Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 9000

SI1330EDL-T1-E3 electronic component of Vishay SI1330EDL-T1-E3

MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1

SSM3J35AMFV,L3F electronic component of Toshiba SSM3J35AMFV,L3F

MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 47583

RU3030M2 electronic component of Ruichips RU3030M2

MOSFET N Trench 30V 30A (Tc) 2.5V @ 250uA 15 mΩ @ 20A,10V PDFN3333 RoHS
Stock : 0

TDM3466 electronic component of Techcode TDM3466

MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1

CRTD110N03L electronic component of CRMICRO CRTD110N03L

MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1

SI2102-TP electronic component of Micro Commercial Components (MCC) SI2102-TP

N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 0

CJAB55N03 electronic component of Changjiang CJAB55N03

MOSFET PDFNWB3.3x3.3-8L RoHS
Stock : 1

ADVANCED LINEAR ALD1101A/ALD1101B DEVICES, INC. ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrors intended for a broad range of analog applications. These enhancement- Precision current sources mode transistors are manufactured with Advanced Linear Devices Analog switches enhanced ACMOS silicon gate CMOS process. Choppers Differential amplifier input stage The ALD1101 offers high input impedance and negative current tempera- Voltage comparator ture coefficient. The transistor pair is matched for minimum offset voltage Data converters and differential thermal response, and it is designed for switching and Sample and Hold amplifying applications in +2V to +10V systems where low input bias Analog inverter current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used with an ALD1102, a dual CMOS analog switch can be constructed. In addition, the ALD1101 is intended as a building block for PIN CONFIGURATION differential amplifier input stages, transmission gates, and multiplexer applications. 1 8 SUBSTRATE SOURCE The ALD1101 is suitable for use in precision applications which require 1 very high current gain, beta, such as current mirrors and current sources. SOURCE GATE 2 7 The high input impedance and the high DC current gain of the Field Effect 1 2 Transistors result in extremely low current loss through the control gate. DRAIN 3 6 GATE The DC current gain is limited by the gate input leakage current, which is 1 2 specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25C is = 5mA/50pA = 100,000,000. IC 4 5 DRAIN 2 TOP VIEW SAL, PAL PACKAGES FEATURES * IC pin is internally connected. Do not connect externally. Low threshold voltage of 0.7V Low input capacitance Low Vos grades -- 2mV, 5mV, 10mV 12 High input impedance -- 10 typical Negative current (I ) temperature coefficient DS Enhancement-mode (normally off) 9 DC current gain 10 BLOCK DIAGRAM RoHS compliant GATE 1 (2) ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) Operating Temperature Range* DRAIN 1 (3) SOURCE 1 (1) 0C to +70C0C to +70C SUBSTRATE (8) 8-Pin 8-Pin DRAIN 2 (5) SOURCE 2 (7) SOIC Plastic Dip Package Package ALD1101ASAL ALD1101APAL GATE 2 (6) ALD1101BSAL ALD1101BPAL ALD1101SAL ALD1101PAL * Contact factory for high temperature versions. 2021 Advanced Linear Devices, Inc., Vers. 2.2 www.aldinc.com 1 of 7ABSOLUTE MAXIMUM RATINGS Drain-source voltage, V 10V DS Gate-source voltage, V 10V GS Power dissipation 500mW Operating temperature range SAL, PAL packages 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS T = 25C unless otherwise specified A ALD1101A ALD1101B ALD1101 Test Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Conditions Gate Threshold Voltage V 0.4 0.7 1.0 0.4 0.7 1.0 0.4 0.7 1.0 V I = 10A V = V T DS GS DS Offset Voltage V 2 5 10 mV I = 100A V = V OS DS GS DS V - V GS1 GS2 Gate Threshold TC -1.2 -1.2 -1.2 mV/C VT Temperature Drift On Drain Current I 25 40 25 40 25 40 mA V = V = 5V DS(ON) GS DS Transconductance G 5 10 5 10 5 10 mmho V = 5V I = 10mA fs DS DS Mismatch G 0.5 0.5 0.5 % fs Output G 200 200 200 mho V = 5V I = 10mA OS DS DS Conductance Drain Source R 50 75 50 75 50 75 V = 0.1V V = 5V DS(ON) DS GS ON Resistance Drain Source ON Resistance R 0.5 0.5 0.5 % V = 0.1V V = 5V DS(ON) DS GS Mismatch Drain Source Breakdown BV 10 10 10 V I = 10A V = 0V DSS DS GS Voltage Off Drain Current I 0.1 4 0.1 4 0.1 4 nA V = 10V V = 0V DS(OFF) DS GS 44 4 AT = 125C A Gate Leakage I 1 100 1 100 1 100 pA V = 0V V = 10V GSS DS GS Current 10 10 10 nA T = 125C A Input C 610 6 10 6 10 pF ISS Capacitance ALD1101A/ALD1101B/ALD1101 Advanced Linear Devices 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted