Genesic Semiconductor MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Id - Continuous Drain Current
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Vds - Drain-source Breakdown Voltage
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Rds On - Drain-source Resistance
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Transistor Polarity
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Vgs - Gate-source Breakdown Voltage
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Vgs Th - Gate-source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Mounting Style
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Packaging
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Number Of Channels
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Vgs - Gate-source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
G3R160MT17J


MOSFET 1700V 160mO TO-263-7 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor 0
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USD 12.2589

Multiples of: 1

18 A1.7 kV160 mOhmsN - Channel 2.7 V- 55 C+ 175 C145 WSMD/SMTTO - 263 - 7TubeSiC1 Channel- 5 V , + 15 V29 nCEnhancement  
GA05JT03-46


GeneSiC Semiconductor MOSFET SiC High Temperature JT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 56.0908

Multiples of: 1

9 A300 V620 mOhmsN - Channel30 V - 55 C+ 225 C20 WThrough HoleTO - 46 - 3BulkSic1 Channel30 V14.6 nCEnhancement  
G2R120MT33J


MOSFET 3300V 120mO TO-263-7 G2R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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6 to 16 Weeks Calender.png

USD 124.3038

Multiples of: 1

34 A3.3 kV120 mOhmsN - Channel 4.5 V- 55 C+ 175 C366 WSMD/SMTTO - 263 - 7TubeSiC1 Channel- 5 V , + 20 V130 nCEnhancement  
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