About MOSFET

Texas Instruments MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD75208W1015


Mosfet Array 2 P-Channel (Dual) Common Source 20V 1.6A 750mW Surface Mount 6-DSBGA (1x1.5)
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Texas Instruments 8778
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USD 0.1644
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1.6 A20 V68 mOhms , 108 mOhmsP - Channel 500 mV- 55 C+ 150 C750 mWSmd/SmtDSBGA - 6ReelSi2 Channel- 4.5 V2.5 nC ,Enhancement Nexfet
CSD87381P


MOSFET Sync Buck NexFET Pwr Block II
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Texas Instruments 8367
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USD 0.3286
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15 A30 V7 mOhmsN - channel10 V1 v to 1.7 V- 55 C+ 150 C4 WSmd/smtPTAB - 5ReelSi2 Channel8 V8.9 nCEnhancement Nexfet
CSD13302W


MOSFET 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA
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Texas Instruments 8264
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USD 0.1
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1.6 A 17.1 mOhmsN - channel     Smd/SmtDSBGA - 4Cut TapeSi1_Channel    Nexfet
CSD25310Q2


P-Channel 20 V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)
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Texas Instruments 8217
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USD 0.1633
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- 9.6 A- 20 V23.9 mOhmsP - Channel- 8 V- 850 mV- 40 C+ 85 C2.9 WSmd/SmtWSON - 6 FETReelSi1 Channel- 4.5 V3.6 nCEnhancement Nexfet
CSD23202W10


Texas Instruments MOSFET 12V P-channel NexFET Pwr MOSFET
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Texas Instruments 8104
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USD 0.1137
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2.2 A12 V92 mOhmsP - Channel 900 mV- 55 C+ 150 C1 WSmd/SmtDSBGA - 4ReelSi1 Channel- 6 V3.8 nCEnhancement Nexfet
CSD87331Q3D


MOSFET 30V Sync Buck NexFET Power Block
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Texas Instruments 8034
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USD 0.5187
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15 A30 V18 mOhms , 5.5 mOhmsN - channel  - 55 C+ 150 C6 WSmd/smtSON - 8ReelSi2 Channel10 V2.7 nC , 6.4 nC  Nexfet
CSD87335Q3DT


MOSFET 30-V, N channel synchronous buck NexFET power MOSFET, SON 3 mm x 3 mm power block, 25 A 8-LSON-CLIP -55 to 150
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Texas Instruments 7895
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USD 0.9832
Multiples of: 1

25 A30 V2.4 Ohms , 1.2 OhmsN - Channel 1 v , 750 mV- 55 C+ 150 C6 WSmd/SmtLSON - CLIP - 8Cut TapeSi2 Channel10 V5.7 nC , 10.7 nCEnhancement Nexfet
CSD25484F4


MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 7885
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USD 0.0759
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- 2.5 A- 20 V825 mOhmsP - Channel - 1.2 V- 55 C+ 150 C500 mWSmd/SmtLGA - 3ReelSi1 Channel- 12 V1090 pCEnhancement  
CSD23285F5


MOSFET -12-V, P channel NexFET power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 7639
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USD 0.1204
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- 3.3 A- 12 V29 mOhmsP - channel - 950 mV- 55 C+ 150 C1.4 WSmd/smtPICOSTAR - 3ReelSi1_Channel- 6 V4.2 nCEnhancement Picostar
CSD18501Q5A


N-Channel 40 V 22A (Ta), 100A (Tc) 3.1W (Ta), 150W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 7604
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USD 0.8851
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161 A40 V3.2 mOhmsN - channel 1.4 V- 55 C+ 150 C150 WSmd/smtSONReelSi1 Channel10 V42 nCEnhancement Nexfet
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