About MOSFET

Texas Instruments MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD17552Q3A


N-Channel 30 V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3)
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Texas Instruments 16975
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USD 0.4968
Multiples of: 1

48 A30 V8.1 mOhmsN - channel 1.5 V- 55 C+ 150 C2.6 WSmd/smtSON - 8ReelSi1 Channel20 V9 nC  Nexfet
CSD17551Q3A


N-Channel 30 V 12A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3)
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Texas Instruments 16675
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USD 0.2725
Multiples of: 1

48 A30 V9 mOhmsN - channel 1.1 V- 55 C+ 150 C2.6 WSmd/smtSON - 8ReelSi1 Channel10 V6 nCEnhancement Nexfet
CSD23280F3


MOSFET -12-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 16608
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USD 0.0593
Multiples of: 1

1.8 A- 12 V399 mOhmsP - Channel - 950 mV- 55 C+ 150 C500 mWSmd/SmtQFN - 3ReelSi1 Channel- 6 V0.95 nCEnhancement Picostar
CSD25481F4


MOSFET P-CH Pwr MOSFET 20V 90mohm
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Texas Instruments 16589
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USD 0.0725
Multiples of: 1

- 2.5 A- 20 V105 mOhmsP - Channel- 12 V- 950 mV- 55 C+ 150 C500 mWSmd/SmtPICOSTAR - 3ReelSi1 Channel- 12 V0.913 nC  Nexfet
CSD25480F3


MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 159 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 15191
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USD 0.0541
Multiples of: 1

- 1.7 A- 20 V840 mOhmsP - Channel - 1.2 V- 55 C+ 150 C500 mWSmd/SmtQFN - 3ReelSi1 Channel- 12 V0.7 nCEnhancement Picostar
CSD19531Q5A


N-Channel 100 V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 14550
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USD 0.8627
Multiples of: 2500

110 A100 V6.4 mOhmsN - Channel20 V2.7 V- 55 C+ 150 C3.3 WSmd/SmtVSON - 8 FETReelSi1 Channel20 V37 nCEnhancement Nexfet
CSD17581Q3A


MOSFET 30-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm 8-VSONP -55 to 150
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Texas Instruments 13971
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USD 0.3174
Multiples of: 1

25 A30 V3.9 mOhmsN - channel 1 V- 55 C+ 150 C63 WSmd/smtVSONP - 8Cut TapeSi1_Channel20 V54 nCEnhancement Nexfet
CSD16327Q3


N-Channel 25 V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
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Texas Instruments 13896
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USD 0.4531
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSONReel      Nexfet
CSD25483F4


P-Channel 20 V 1.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
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Texas Instruments 13699
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USD 0.0529
Multiples of: 1

- 1.6 A- 20 V245 mOhmsP - Channel- 12 V- 950 mV- 55 C+ 150 C500 mWSmd/SmtPICOSTAR - 3ReelSi1 Channel12 V0.96 nCDepletion Nexfet
CSD17579Q3A


Texas Instruments MOSFET CSD17579Q3A 30 V 8-VSONP
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Texas Instruments 3186
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USD 0.1509
Multiples of: 5

39 A30 V10.2 mOhmsN - Channel 1.1 V- 55 C+ 150 C29 WSmd/SmtVSONP - 8ReelSi1 Channel10 V15 nCEnhancement Nexfet
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