Product Information

SLCD-61N5

SLCD-61N5 electronic component of Advanced Photonix

Datasheet
PHOTODIODE, PLANAR CHIP

Manufacturer: Advanced Photonix
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 25.4601 ea
Line Total: USD 25.46

401 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
401 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

SLCD-61N5
Advanced Photonix

1 : USD 25.4601
5 : USD 22.2039
10 : USD 19.882
50 : USD 16.8682
100 : USD 14.6109
250 : USD 14.3215

     
Manufacturer
Product Category
Peak Wavelength
Dark Current
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity
Diode Case Style
No Of Pins
Operating Temperature Min
Operating Temperature Max
Packaging
Msl
Active Area
Breakdown Voltage Vbr
Diode Type
External Depth
External Length / Height
Open Circuit Voltage
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Short Circuit Current
Wavelength Typ
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SLCD-61N5 Solderable Planar Photodiode Features Visible to IR spectral irradiance range 0.4 10.2 High reliability Oxide passivation Linear short circuit current Low capacitance, high speed 10.2 Description The Silonex series of silicon solderable planar Sensitive Area photodiodes feature low cost, high reliability, and linear Cathode Anode (93.6 sq.mm.) short circuit current over a wide range of illumination. Dimensions in mm. (+/- 0.13) These devices are widely used for light sensing and power generation because of their stability and high Also available with leads as part number SLSD-71N5 efficiency. They are particularly suited to power conversion applications due to their low internal Directional Sensitivity Characteristics impedance, relatively high shunt impedance, and 40 30 20 10 1.0 stability. These devices also provide a reliable and inexpensive detector for instrumentation and light 50 0.8 Half Angle = 60 beam sensing applications. 0.6 60 0.4 70 Absolute Maximum Ratings Storage Temperature -40C to +125C 0.2 80 Operating Temperature -40C to +125C 0.0 90 100 1.0 0.8 0.6 0.4 20 40 60 80 100 120 Electrical Characteristics (T =25C unless otherwise noted) A Symbol Parameter Min Typ Max Units Test Conditions 2 I Short Circuit Current 2.5 4.0 mA V =0V, Ee=25mW/cm (1) SC R 2 V Open Circuit Voltage 0.40 V Ee=25mw/cm (1) OC I Reverse Dark Current 3.3 V =5V, Ee=0 A D R C Junction Capacitance 2.0 nF V =0V, Ee=0, f=1MHz J R Spectral Sensitivity 0.55 A/W S =940nm V Reverse Breakdown Voltage 20 V I =100A BR R Maximum Sensitivity Wavelength 930 nm P Sensitivity Spectral Range 400 1100 nm R Acceptance Half Angle 60 deg (off center-line) 1/2 Specifications subject to change without notice 104114 REV 0 Notes: (1) Ee = light source 2854 K 5200 St. Patrick St., Montreal The Old Railway, Princes Street Que., H4E 4N9, Canada Ulverston, Cumbria, LA12 7NQ, UK Tel: 514-768-8000 Tel: 01 229 581 551 Fax: 514-768-8889 Fax: 01 229 581 554 QF-84 X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for advanced photonix manufacturer: Other Similar products are found below : SLCD-61N5 NSL 4962 NORPS-12 SLD-70 BG2A NSL 06S53 NSL-32SR3 NSL 19M51

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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