Product Information

SLCD-61N8

SLCD-61N8 electronic component of Advanced Photonix

Datasheet
PHOTODIODE, PLANAR CHIP

Manufacturer: Advanced Photonix
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.3669 ea
Line Total: USD 4.37

1412 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1412 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

SLCD-61N8
Advanced Photonix

1 : USD 4.3669
10 : USD 3.8096
25 : USD 3.414
50 : USD 3.0098
100 : USD 2.6057
500 : USD 2.4724

     
Manufacturer
Product Category
Peak Wavelength
Dark Current
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity
Diode Case Style
No Of Pins
Operating Temperature Min
Operating Temperature Max
Packaging
Msl
Active Area
Breakdown Voltage Vbr
Diode Type
External Depth
External Length / Height
Height
Open Circuit Voltage
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Short Circuit Current
Wavelength Typ
LoadingGif

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SLCD-61N8 Solderable Planar Photodiode Features Visible to IR spectral irradiance range High reliability 3.4 0.4 Oxide passivation Linear short circuit current 1.3 Anode Low capacitance, high speed Available in arrays where indicates number of Cathode Sensitive Area elements ( maximum of 8 elements ) (2.7 sq. mm.) Description Dimensions in mm. (+/- 0.13) The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and Also available with leads as part number SLSD-71N8 linear short circuit current over a wide range of illumination. These devices are widely used for light Directional Sensitivity Characteristics sensing and power generation because of their 40 30 20 10 1.0 stability and high efficiency. They are particularly 50 0.8 Half Angle = 60 suited to power conversion applications due to their low internal impedance and relatively high shunt 0.6 60 impedances, and stability. These devices also provide a reliable, inexpensive detector for 0.4 70 applications such as light beam sensing and 0.2 instrumentation. The electrical characteristics below 80 are per element. In the multielement arrays the 0.0 90 cathodes are common to a all elements. 100 1.0 0.8 0.6 0.4 20 40 60 80 100 120 Absolute Maximum Ratings Storage Temperature -40C to +125C Operating Temperature -40C to +125C Electrical Characteristics (T =25C unless otherwise noted) A Symbol Parameter Min Typ Max Units Test Conditions 2 I Short Circuit Current 100 170 A V =0V, Ee=25mW/cm (1) SC R 2 V Open Circuit Voltage 0.40 V Ee=25mw/cm (1) OC I Reverse Dark Current 1.7 V =5V, Ee=0 A D R C Junction Capacitance 100 pF V =0V, Ee=0, f=1MHz J R Spectral Sensitivity 0.55 A/W S =940nm V Reverse Breakdown Voltage 20 V I =100A BR R Maximum Sensitivity Wavelength 930 nm P Sensitivity Spectral Range 400 1100 nm R Acceptance Half Angle 60 deg 1/2 Specifications subject to change without notice 104118 REV 0 Notes: (1) Ee = light source 2854 K X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for advanced photonix manufacturer: Other Similar products are found below : SLCD-61N5 NSL 4962 NORPS-12 SLD-70 BG2A NSL 06S53 NSL-32SR3 NSL 19M51

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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