1N21WE Advanced Semiconductor

1N21WE SILICON MIXER DIODE PACKAGE STYLE DO- 23 DESCRIPTION: The ASI 1N21WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: High burnout resistance Low noise figure Hermetically sealed package MAXIMUM RATINGS I 20 mA F V 1.0 V R O P 5.0 (ERGS) T = 25 C DISS C O O T -55 C to +150 C J O O T -55 C to +150 C STG NONE O CHARACTERISTICS T = 25 C C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS F = 3060 MHz P = 0.5 mW N = 1.5 dB lo Fif N 7.0 dB F R = 100 I = 30 MHz L F V 1.3 SWR Z R = 22 f = 1000 Hz 350 450 L IF frange 8.0 12.4 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1 Specifications are subject to change without notice. X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Schottky Diodes & Rectifiers category: Click to view products by Advanced Semiconductor manufacturer: Other Similar products are found below : MA4E2039 D1FH3-5063 MBR10100CT-BP MBR1545CT MMBD301M3T5G RB160M-50TR RB551V-30 BAS16E6433HTMA1 BAT 54-02LRH E6327 NSR05F40QNXT5G NTE555 JANS1N6640 SB07-03C-TB-H SB1003M3-TL-W SK310-T SK32A-LTP SK33A-TP SK34B-TP SS3003CH-TL-E GA01SHT18 CRS10I30A(TE85L,QM MA4E2501L-1290 MBRB30H30CT-1G SB007-03C-TB-E SK32A-TP SK33B-TP SK35A-TP SK38B-TP NRVBM120LT1G NTE505 NTSB30U100CT-1G SS15E-TP VS-6CWQ10FNHM3 ACDBA1100LR-HF ACDBA1200-HF ACDBA140-HF ACDBA2100-HF ACDBA3100-HF CDBQC0530L-HF CDBQC0240LR-HF ACDBA340-HF ACDBA260LR-HF ACDBA1100-HF SK310B-TP MA4E2502L-1246 MA4E2502H-1246 NRVBM120ET1G NSR01L30MXT5G NTE573 NTE6081