MRF587 Advanced Semiconductor

MRF587 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4NL STUD DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. FEATURES: P = 16 dB Typical at 220 W/500 MHz G Low Noise Figure Diffused Ballast Resistors Omnigold Metalization System MAXIMUM RATINGS I 200 mA C V 34 V CBO V 17 V CEO V 2.5 V EBO P 5.0 W T = 25 C DISS C T -65 C to +200 C J T -65 C to +150 C STG CHARACTERISTICS T = 25 C C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 1.0 mA 34 V CBO C BV I = 5.0 mA 17 V CEO C BV I = 100 A 2.5 V EBO E I V = 10 V 50 A CBO CB h V = 5.0 V I = 50 mA 50 200 --- FE CE C C V = 10 V f = 1.0 MHz 1.7 2.2 pF cb CB G 11 dB P V = 15 V I = 90 mA f = 0.3 GHz CC C 65 % C A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1 Specifications are subject to change without notice. X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for RF Bipolar Transistors category: Click to view products by Advanced Semiconductor manufacturer: Other Similar products are found below : MAPRST0912-50 MCH4016-TL-H MMBT5551-G MRF10120 15GN01CA-TB-E PH1214-25M MAPRST0912-350 MMBTH10-TP BFP 640F H6327 BFP 720F H6327 BFP 740F H6327 BFR 360F H6765 MRF10031 NSVF4009SG4T1G BFP 182R E7764 BFP405H6740XTSA1 MRF10350 BFR360FH6765XTSA1 BFP410H6327XTSA1 BFP620FH7764XTSA1 BFP720ESDH6327XTSA1 BFP720FH6327XTSA1 BFR360L3E6765XTMA1 BFP420H6433XTMA1 BFP420H6740XTSA1 BFP420H6801XTSA1 MCH4015-TL-H BF888H6327XTSA1 MMBT2222A-G BFP196WH6327XTSA1 BFP405FH6327XTSA1 BFP640ESDH6327XTSA1 BFR193L3E6327XTMA1 BFS483H6327XTSA1 NSVF4020SG4T1G NSVF6003SB6T1G MRF10005 BFP420FH6327XTSA1 BFP740FESDH6327XTSA1 BFR181E6327HTSA1 BFR181WH6327XTSA1 BFR182E6327HTSA1 BFR193E6327HTSA1 BFP181E7764HTSA1 BFP183WH6327XTSA1 BFP720H6327XTSA1 BFR182WH6327XTSA1 BFU590GX MAPR-000912-500S00 BFR340FH6327XTSA1