MAPRST0912-350 Avionics Pulsed Power Transistor Rev. V1 350 W, 960 - 1215 MHz, 10 s Pulse, 10 % Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS* Compliant Absolute Maximum Ratings +25C Parameter Symbol Rating Collector-Emitter Voltage V 65 V CES Emitter-Base Voltage V 3 V EBO Collector Current (Peak) I 32.5 A C Power Dissipation P 1.34 kW TOT Storage Temperature T -65C to +200C STG Junction Temperature T +200C J Electrical Specifications: V = 50 V, P = 40 W, T = 25 5C (unless otherwise noted) CC IN A Parameter Symbol Test Conditions Units Min. Max. Collector-Emitter Breakdown Voltage BV I = 50 mA V 65 - CES C Collector-Emitter Leakage Current I V = 50 V mA - 15 CES CE Thermal Resistance R F = 960, 1090, 1215 MHz C/W - 0.13 TH(JC) Output Power P F = 960, 1090, 1215 MHz W 350 - O Power Gain G F = 960, 1090, 1215 MHz dB 9.4 - P Collector Efficiency h F = 960, 1090, 1215 MHz % 45 - C Input Return Loss RL F = 960, 1090, 1215 MHz dB - -9 Load Mismatch Stability VSWR-T F = 960 MHz - - 10:1 Load Mismatch Tolerance VSWR-S F = 960, 1090, 1215 MHz - - 1.5:1 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAPRST0912-350 Avionics Pulsed Power Transistor Rev. V1 350 W, 960 - 1215 MHz, 10 s Pulse, 10 % Duty Typical RF Performance P1dB Overdrive Freq. P P Gain Gain I Eff RL VSWR-S VSWR-T IN OUT C (MHz) (W) (W) (dB) (A) (%) (dB) (1.5:1) (10:1) (dB) P (W) OUT P (dB) O 960 40 421 10.22 15.7 53.4 -19.9 S P 496 0.72 1090 40 401 10.01 15.0 53.4 -18.5 S 469 0.69 1215 40 399 9.99 0.23 15.0 53.2 -21.5 S 421 0.22 Note: Po(dB) is the difference between P at 1dB overdrive and P at P = 40W. OUT OUT IN Gain vs. Frequency Collector Efficiency vs. Frequency 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: