Product Information

AQD-D3L2GN16-SQ

AQD-D3L2GN16-SQ electronic component of Advantech

Datasheet
Memory Modules 2G DDR3-1600 256X8 1.35V SAM(G)

Manufacturer: Advantech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 34.9603 ea
Line Total: USD 34.96

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

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AQD-D3L2GN16-SQ
Advantech

1 : USD 34.65

     
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240Pin DDR3L 1600 UDIMM 2GB Based on 256Mx8 AQD-D3L2GN16-SQ Advantech AQD-D3L2GN16-SQ Datasheet Rev. 2.0 2014-10-20 1 240Pin DDR3L 1600 UDIMM 2GB Based on 256Mx8 AQD-D3L2GN16-SQ Description Pin Identification Pin Identification DDR3L Unbuffered DIMM is high-speed, low power Symbol Function memory module that use 256Mx8bits DDR3L SDRAM in FBGA package and a 2048 bits serial EEPROM on a A0~A14, BA0~BA2 Address/Bank input 240-pin printed circuit board. DDR3L Unbuffered DIMM is DQ0~DQ63 Bi-direction data bus. a Dual In-Line Memory Module and is intended for DQS0~DQS7 Data strobes mounting into 240-pin edge connector sockets. /DQS0~/DQS7 Differential Data strobes Synchronous design allows precise cycle control with the CK0, /CK0,CK1, /CK1 Clock Input. (Differential pair) use of system clock. Data I/O transactions are possible CKE0, CKE1 Clock Enable Input. on both edges of DQS. Range of operation frequencies, ODT0, ODT1 On-die termination control line programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance /S0, /S1 DIMM rank select lines. memory system applications. /RAS Row address strobe /CAS Column address strobe Features /WE Write Enable RoHS compliant products. DM0~DM7 Data masks/high data strobes JEDEC standard 1.35V(1.28V~1.45V) Power supply VDD Core power supply JEDEC standard 1.5V(1.425V~1.575V) Power supply VDDQ I/O driver power supply VDDQ=1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Clock Freq: 800MHZ for 1600Mb/s/Pin. V DQ I/O reference supply REF Programmable CAS Latency: 6, 7, 8, 9 ,10 ,11 Command/address reference V CA REF Programmable Additive Latency (Posted /CAS): supply 0,CL-2 or CL-1 clock V SPD SPD EEPROM power supply DD Programmable /CAS Write Latency (CWL) I2C serial bus address select for = 8(DDR3-1600) SA0~SA2 EEPROM 8 bit pre-fetch SCL I2C serial bus clock for EEPROM Burst Length: 4, 8 SDA I2C serial bus data for EEPROM Bi-directional Differential Data-Strobe Internal calibration through ZQ pin VSS Ground On Die Termination with ODT pin /RESET Set DRAMs Known State Serial presence detect with EEPROM VTT SDRAM I/O termination supply Asynchronous reset NC No Connection 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
ADVANTECH CORPORATION
ADVANTECH B+B SMARTWORKS
Advantech Corp

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