Product Information

AS1C8M16PL-70BIN

AS1C8M16PL-70BIN electronic component of Alliance Memory

Datasheet
SRAM 128M 8Mx16 1.8V LP Pseudo SRAM IT
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.3595 ea
Line Total: USD 6.36

460 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
460 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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AS1C8M16PL-70BIN
Alliance Memory

1 : USD 6.3595
10 : USD 5.267
100 : USD 5.2555
250 : USD 5.0025
490 : USD 4.968
980 : USD 4.8185
2940 : USD 4.807
4900 : USD 4.7955
9800 : USD 4.784

Read More Specifications

     
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Additional Infomation About Product

AS1C8M16PL-70BIN Revision History 128M (4Mx16 bit CellularRAM AD-MUX *2 stack) Low Power PSEUDO SRAM 49ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Aug 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 53 - Rev.1.0 Aug. 2018AS1C8M16PL-70BIN 4Mx16 bit CellularRAM AD-MUX *2 stack x16 Burst, Multiplexed Address/Data RAM Specification FEATURES - 16-bit multiplexed address/data bus - Single device supports asynchronous and burst operation - Vcc, VccQ voltages: 1.7V-1.95V VCC 1.7V-1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 108 MHz (tCLK = 9.26ns) , 133MHz(tCLK = 7.5ns) Burst initial latency: 37.0ns (4 clocks) 108 MHz , 37.5ns (5 clocks) 133 MHz tACLK: 7ns 108 MHz , 5.5ns 133 MHz - Low power consumption: Asynchronous READ: <25mA Initial access, burst READ: (37.0ns 4 clocks 108 MHz) <35mA Continuous burst READ: <30mA Initial access, burst READ: (37.5ns 5 clocks 133 MHz) <40mA Continuous burst READ: <35mA Deep power down: <40 uA(max. at 85C) : < 10uA(Typ.at 25C) - Low-power features On-chip temperature compensated self refresh (TCSR) Partial array refresh (PAR) Deep Power down(DPD) mode OPTIONS - Configuration: 64Mb (4 megabit x 16) * 2 stack - Vcc core / VccQ I/O voltage supply: 1.8V - Timing: 70ns access - Frequency: 48MHz,83 MHz, 108 MHz, 133 MHz - Standby current at 85C : 180uA (Max) - Standby current at 25C : 100uA (Typ) - Package type: 49ball FBGA Package(4.0x4.0x0.8mm) - Operating temperature range: Industrial : -30C to +85C ORDERING INFORMATION Power Dissipation Product Operating Vcc PKG Interface Bus Standby Family Temperature Range Type o (I , Typ.,25 C) SB1 o 2) AS1C8M16PL-70BIN x16 1.70 ~ 1.95V 49-FBGA (-30 ~ 85 C) 100 A Confidential - 2 of 53 - Rev.1.0 Aug. 2018

HS Compliance

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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