X-On Electronics has gained recognition as a prominent supplier of AS6C2008A-55SIN SRAM across the USA, India, Europe, Australia, and various other global locations. AS6C2008A-55SIN SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

AS6C2008A-55SIN Alliance Memory

AS6C2008A-55SIN electronic component of Alliance Memory
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Part No.AS6C2008A-55SIN
Manufacturer: Alliance Memory
Category: SRAM
Description: SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
Datasheet: AS6C2008A-55SIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4735 ea
Line Total: USD 4.47

Availability - 9
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
68 - WHS 1


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 4.4735
10 : USD 3.864
72 : USD 3.611
288 : USD 3.5765
504 : USD 3.496
1008 : USD 3.4155
2520 : USD 3.3465
5040 : USD 3.1855
10008 : USD 3.128

   
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We are delighted to provide the AS6C2008A-55SIN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS6C2008A-55SIN and other electronic components in the SRAM category and beyond.

January 2007AUGUST 2007 AS6C2008A 512K X 8 BIT LOW POWER CMOS SRAM 256K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C2008A is a 2,097,152-bit low power Fast access time : 55ns CMOS static random access memory organized as Low power consumption: 262,144 words by 8 bits. It is fabricated using very Operating current : 20/18mA (TYP.) high performance, high reliability CMOS technology. Standby current : 2A (TYP.) Its standby current is stable within the range of Single 2.7V ~ 5.5V power supply operating temperature. All outputs TTL compatible Fully static operation The AS6C2008A is well designed for very low power Tri-state output system applications, and particularly well suited for Data retention voltage : 2.0V (MIN.) battery back-up nonvolatile memory application. Lead free and green package available Package : 32-pin 8mm x 20mm TSOP-I The AS6C2008A operates from a single power 32-pin 8mm x 13.4mm STSOP supply of 2.7V ~ 5.5V and all outputs are fully TTL 32-pin 450 mil SOP compatible 32-pin 600 mil P-DIP 36-ball 6mm x 8mm TFBGA PRODUCT FAMILY Product Operating Power Dissipation Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C2008A(LLI) -40 ~ 85 2.7 ~ 5.5V 55ns 2A(LL) 20/18mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A17 Address Inputs Vcc Vss DQ0 DQ7 Data Inputs/Outputs CE , CE2 Chip Enable Inputs 256Kx8 A0-A17 DECODER MEMORY ARRAY WE Write Enable Input OE Output Enable Input V Power Supply CC V Ground SS NC No Connection I/O DATA DQ0-DQ7 COLUMN I/O CIRCUIT CE CE2 CONTROL WE CIRCUIT OE AUGUST/2007, V 1.0 Alliance Memory Inc. Page 1 of 15AS6C2008A *ANUARY 5 534 3 + 8 ) 4 ,/7 0/7%2 -/3 32 - + 8 )4 ,/7 0/7%2 -/3 32 - 0). /.&) 52 4)/. A17 1 32 Vcc A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE A7 5 28 A13 A11 32 OE 1 A9 2 31 A10 A6 6 27 A8 A8 3 30 CE A13 4 29 DQ7 A5 7 26 A9 WE 5 28 DQ6 8 CE2 6 27 DQ5 A4 25 A11 A15 7 26 DQ4 A3 9 24 OE Vcc 8 25 DQ3 AS6C2008A A17 9 24 Vss A2 10 23 A10 A16 10 23 DQ2 A14 11 22 DQ1 A1 11 22 CE A12 12 21 DQ0 A7 13 20 A0 A0 12 21 DQ7 A6 14 19 A1 A5 15 18 A2 DQ0 13 20 DQ6 A4 16 17 A3 DQ1 14 19 DQ5 TSOP-I/STSOP DQ2 15 18 DQ4 Vss 16 17 DQ3 SOP/P-DIP % 1 7 % 1 1 . 1 6 S S 6 C C 6 C C 6 S S % 1 . 1 & 1 / % % 1 ( 4 & 5 534 6 LLIANCE -EMORY )NC 0AGE OF

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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