We are the renowned AS6C8008-55BIN SRAM seller and distributer in the USA, India, Europe, Australia, and beyond. AS6C8008-55BIN SRAM is a manufacturer from Alliance Memory. X-ON Electronics Components provides affordable electronic SRAM in the USA.

AS6C8008-55BIN

AS6C8008-55BIN electronic component of Alliance Memory
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Part No.AS6C8008-55BIN
Manufacturer: Alliance Memory
Category:SRAM
Description: SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Datasheet: AS6C8008-55BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.9695 ea
Line Total: USD 7.97

320 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
320 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 8.0845
10 : USD 7.567
25 : USD 6.716
100 : USD 6.4975
480 : USD 6.3365
960 : USD 6.049
2880 : USD 5.98
5280 : USD 5.98

We proudly offer the AS6C8008-55BIN SRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS6C8008-55BIN SRAM.
     
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JANUARY 2008January 2007 AS6C8008 512KX 8 BIT LOW POWER CMOS SRAM 1024K X 8 BIT SUPER LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C8008 is a 8,388,608-bit low power Fast access time : 55ns CMOS static random access memory organized as Low power consumption: 1,048,576 words by 8 bits. It is fabricated using very Operating current : 30mA (TYP.) high performance, high reliability CMOS technology. Standby current : 6A (TYP.) LL-version Its standby current is stable within the range of Single 2.7V ~ 5.5V power supply operating temperature. All inputs and outputs TTL compatible Fully static operation The AS6C8008 is well designed for very low Tri-state output power system applications, and particularly well Data retention voltage : 1.5V (MIN.) suited for battery back-up nonvolatile memory Lead free and green package available application. Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA The AS6C8008 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Operating Power Dissipation Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C8008(I) -40 ~ 85 2.7 ~ 5.5V 55ns 6A(LL) 30mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A19 Address Inputs Vcc Vss DQ0 DQ7 Data Inputs/Outputs CE , CE2 Chip Enable Inputs 1024Kx8 A0-A19 DECODER MEMORY RRAA Y WE Write Enable Input OE Output Enable Input VCC Power Supply VSS Ground NC No Connection I/O DATA DQ0-DQ7 COLUMN I/O CIRCUIT CE CE2 CONTROL WE CIRCUIT OE JANUARY/2008, V 1.0 Alliance Memory Inc. Page 1 of 11 AS6C8008 JANUARY 2008January 2007 AS6C8008 512K X 8 BIT LOW POWER CMOS SRAM 1024K X 8 BIT SUPER LOW POWER CMOS SRAM PIN CONFIGURATION A 4 1 4 4 A 5 A 3 2 4 3 A 6 A 2 3 4 2 A 7 A 1 4 4 1 O E A 0 5 4 0 C E 2 C E 6 3 9 A 8 N C 7 3 8 N C N C 8 3 7 N C D Q 0 9 3 6 D Q 7 D Q 1 1 0 3 5 D Q 6 V c c 1 1 3 4 V s s V s s 1 2 3 3 V c c NC OE A 0 A1 A 2 CE2 A D Q 2 1 3 3 2 D Q 5 B NC NC A 3 A4 C E NC D Q 3 1 4 3 1 D Q 4 C DQ0 NC A 5 A6 NC DQ4 N C 1 5 3 0 N C N C 1 6 2 9 N C D V ss DQ1 A1 7 A7 DQ 5 V cc W E 1 7 2 8 A 9 V cc DQ2 NC A 1 6 DQ 6 V ss E A 1 9 1 8 2 7 A 1 0 DQ3 NC A1 4 A 1 5 NC DQ7 F A 1 8 1 9 2 6 A 1 1 G NC NC A1 2 A 1 3 W E NC A 1 7 2 0 2 5 A 1 2 A 1 6 2 1 2 4 A 1 3 H A 18 A 8 A 9 A 1 0 A 11 A 19 A 1 5 2 2 2 3 A 1 4 1 2 3 4 5 6 TFBGA T S O P - I I JANUARY/2008, V 1.0 Alliance Memory Inc. Page 2 of 11

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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