AS6C8008-55BINTR Alliance Memory

AS6C8008-55BINTR electronic component of Alliance Memory
AS6C8008-55BINTR Alliance Memory
AS6C8008-55BINTR SRAM
AS6C8008-55BINTR  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of AS6C8008-55BINTR SRAM across the USA, India, Europe, Australia, and various other global locations. AS6C8008-55BINTR SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

Part No. AS6C8008-55BINTR
Manufacturer: Alliance Memory
Category: SRAM
Description: SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Datasheet: AS6C8008-55BINTR Datasheet (PDF)
Price (USD)
2000: USD 4.5108 ea
Line Total: USD 9021.6 
Availability : 0
  
QtyUnit Price
2000$ 4.5108

Availability 0
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 2000
Multiples : 2000
QtyUnit Price
2000$ 4.5108

   
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RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS6C8008-55BINTR from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS6C8008-55BINTR and other electronic components in the SRAM category and beyond.

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The Alliance Memory AS6C8008-55BINTR is a high-speed, volatile 8-K x 8-bit CMOS static random access memory (SRAM). This device has a fast access time of 55ns and operates from a wide supply voltage of 2.7V to 6V. The AS6C8008-55BINTR is available in commercial and industrial temperature ranges. This device is also pin-compatible with common 8K SRAMs and is verified to meet AEC-Q100 Grade 1 requirements for automotive applications. The AS6C8008-55BINTR features a synchronous burst architecture, blazing fast access time, and asynchronous output enable (OE) and chip select (CE) controls for improved system performance. This device is an ideal solution for applications requiring low power consumption, fast access time, and high-reliability.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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