X-On Electronics has gained recognition as a prominent supplier of AS6C8016B-55BINTR SRAM across the USA, India, Europe, Australia, and various other global locations. AS6C8016B-55BINTR SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.
We are delighted to provide the AS6C8016B-55BINTR from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS6C8016B-55BINTR and other electronic components in the SRAM category and beyond.
AS6C8016B-45BIN AS6C8016B-55BIN Revision History 8Mb - 512k x 16bit SUPER LOW POWER CMOS SRAM Revision Details Date Rev 1.0 Initial Release Nov 2020 Confidential Rev.1.0 Nov.2020 -1 13- AS6C8016B-45BIN AS6C8016B-55BIN FEATURES GENERAL DESCRIPTION The AS6C8016B is a 8,388,608-bit low power Fast access time : 45/55ns CMOS static random access memory organized as Low power consumption: 524,288 words by 16 bits. It is fabricated using very Operating current : 12mA /10mA(TYP.) high performance, high reliability CMOS technology. Standby current : 2.5 A (TYP.) Its standby current is stable within the range of Single 2.7V ~ 3.6V power supply operating temperature. All inputs and outputs TTL compatible Fully static operation The AS6C8016B is well designed for low power Tri-state output application, and particularly well suited for battery Data byte control : LB (DQ0 ~ DQ7) back-up nonvolatile memory application. UB (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) The AS6C8016B operates from a single power Package : 48-ball 6mm x 8mm TFBGA supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Operating V Range Speed CC Standby(I ,TYP.) Operating(I ,TYP.) Family Temperature SB1 CC AS6C8016B-45BIN -40 ~ 85 2.7 ~ 3.6V 45ns 2.5A 12mA AS6C8016B-55BIN -40 ~ 85 2.7 ~ 3.6V 55ns 2.5A 10mA Confidential Rev.1.0 Nov.2020 -2 13-