AS6C8016B-55BINTR Alliance Memory

AS6C8016B-45BIN AS6C8016B-55BIN Revision History 8Mb - 512k x 16bit SUPER LOW POWER CMOS SRAM Revision Details Date Rev 1.0 Initial Release Nov 2020 Confidential Rev.1.0 Nov.2020 -1 13- AS6C8016B-45BIN AS6C8016B-55BIN FEATURES GENERAL DESCRIPTION The AS6C8016B is a 8,388,608-bit low power Fast access time : 45/55ns CMOS static random access memory organized as Low power consumption: 524,288 words by 16 bits. It is fabricated using very Operating current : 12mA /10mA(TYP.) high performance, high reliability CMOS technology. Standby current : 2.5 A (TYP.) Its standby current is stable within the range of Single 2.7V ~ 3.6V power supply operating temperature. All inputs and outputs TTL compatible Fully static operation The AS6C8016B is well designed for low power Tri-state output application, and particularly well suited for battery Data byte control : LB (DQ0 ~ DQ7) back-up nonvolatile memory application. UB (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) The AS6C8016B operates from a single power Package : 48-ball 6mm x 8mm TFBGA supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Operating V Range Speed CC Standby(I ,TYP.) Operating(I ,TYP.) Family Temperature SB1 CC AS6C8016B-45BIN -40 ~ 85 2.7 ~ 3.6V 45ns 2.5A 12mA AS6C8016B-55BIN -40 ~ 85 2.7 ~ 3.6V 55ns 2.5A 10mA Confidential Rev.1.0 Nov.2020 -2 13-