X-On Electronics has gained recognition as a prominent supplier of AS7C31026B-10TCN sram across the USA, India, Europe, Australia, and various other global locations. AS7C31026B-10TCN sram are a product manufactured by Alliance Memory. We provide cost-effective solutions for sram, ensuring timely deliveries around the world.

AS7C31026B-10TCN Alliance Memory

AS7C31026B-10TCN electronic component of Alliance Memory
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Part No.AS7C31026B-10TCN
Manufacturer: Alliance Memory
Category:SRAM
Description: SRAM 1M, 3.3V, 10ns, FAST 64K x 16 Asynch SRAM
Datasheet: AS7C31026B-10TCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.2535 ea
Line Total: USD 6.25

Availability - 108
Ships to you between
Thu. 20 Jun to Mon. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 5.865
10 : USD 5.3705
270 : USD 5.359
2565 : USD 5.336
5130 : USD 5.1635
10125 : USD 5.1175

   
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We are delighted to provide the AS7C31026B-10TCN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS7C31026B-10TCN and other electronic components in the SRAM category and beyond.

AS7C31026B Revision History AS7C31026B Revision Details Date Rev 1.0 Initial Issue March. 2004 Rev 1.1 10ns TSOP II not offered due to poor yields April 2007 Rev 2.0 industrial temp TSOP II not offered due to poor yields - August 2009 refer to C die option for TSOP II. We can still offer in SOJ industrial temp. Please note modified from the original Alliance Semiconductor datasheet by Alliance Memory Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential 1/11 Rev.2.0 Aug.2009August 200 9 AS7C31026B 3.3 V 64K X 16 CMOS SRAM Features Industrial and commercial versions Easy memory expansion with CE, OE inputs Organization: 65,536 words 16 bits TTL-compatible, three-state I/O Center power and ground pins for low noise JEDEC standard packaging High speed - 44-pin 400 mil SOJ - 44-pin TSOP 2-400 - 10/12/15/20 ns address access time ESD protection 2000 volts - 5, 6, 7, 8 ns output enable access time Latch-up current 200 mA Low power consumption: ACTIVE - 288 mW / max 10 ns Low power consumption: STANDBY - 18 mW / max CMOS I/O 6 T 0.18 u CMOS technology Logic block diagram Pin arrangement A0 A1 44-Pin SOJ (400 mil), TSOP 2 V CC A2 64 K 16 GND A3 Array A4 1 44 A5 A4 2 43 A6 A3 A5 3 42 A7 A2 A1 4 41 OE A6 5 40 UB A0 A7 6 39 LB CE I/O15 I/O0 7 38 I/O0I/O7 I/O I/O1 8 37 I/O14 Control circuit buffer I/O8I/O15 9 36 I/O13 I/O2 10 35 I/O12 I/O3 V 11 34 GND CC Column decoder WE 12 33 V GND CC 13 32 I/O11 I/O4 I/O5 14 31 I/O10 15 30 I/O9 I/O6 16 29 I/O8 I/O7 UB WE 17 28 NC 18 27 A8 A15 OE 19 26 A9 A14 LB A13 20 25 A10 21 24 A11 A12 CE 22 23 NC NC Selection guide -10 -12 -15 -20 Unit Maximum address access time 10 12 15 20 ns Maximum output enable access time 56 7 8 ns Maximum operating current 80 75 70 65 mA Maximum CMOS standby current 55 5 5 mA August 2009, v 2.0 Alliance Semiconductor P. 2 of 1 1 Copyright Alliance Semiconductor. All rights reserved. Row decoder A8 A9 A10 A11 A12 A13 A14 A15 AS7C31026B

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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