AS7C34096B-10BIN Alliance Memory

AS7C34096B-10TIN AS7C34096B-10BIN Revision History AS7C34096B 512K X 8 BIT HIGH SPEED CMOS SRAM Revision Details Date Rev 1.0 Initial Issue Aug. 2016 Rev 1.1 Added 6mm x 8mm TFBGA Package Sep. 2017 Confidential 1 11 Rev 1.1 Sep 2017AS7C34096B-10TIN AS7C34096B-10BIN FEATURES GENERAL DESCRIPTION The AS7C34096B is a 4,194,304-bit high speed Fast access time : 10ns CMOS static random access memory organized as Low power consumption: 524,288 words by 8 bits. It is fabricated using very Operating current: high performance, high reliability CMOS technology. 40mA(TYP.) Its standby current is stable within the range of Standby current: operating temperature. 2mA(TYP.) Single 3.3V power supply The AS7C34096B operates from a single power All inputs and outputs TTL compatible supply of 3.3V and all inputs and outputs are fully Fully static operation TTL compatible Tri-state output Data retention voltage : 1.5V (MIN.) Package : 44-pin 400 mil TSOP-II 36-ball 6mm x 8mm TFBGA Table 1. Ordering Information Speed Vcc Range Part Number Temperature Package 2.7 ~ 3.6V AS7C34096B-10TIN 10ns 44pin TSOPII Industrial -40C to + 85C AS7C34096B-10BIN 2.7 ~ 3.6V 10ns 36ball FBGA Industrial -40C to + 85C FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A18 Address Inputs Vcc DQ0 D7 Data Inputs/Outputs Vss CE Chip Enable Inputs WE Write Enable Input 512Kx8 A0-A18 DECODER OE Output Enable Input MEMORY ARRAY VCC Power Supply VSS Ground NC No Connection I/O DATA DQ0-DQ7 COLUMN I/O CIRCUIT CE CONTROL WE CIRCUIT OE Confidential 2 11 Rev 1.1 Sep 2017