AON6278 80V N-Channel MOSFET General Description Product Summary V The AON6278 uses trench MOSFET technology that is DS 80V uniquely optimized to provide the most efficient high I (at V =10V) 85A D GS frequency switching performance. Both conduction and R (at V =10V) < 3.3m DS(ON) GS switching power losses are minimized due to an R (at V =6V) < 4.6m DS(ON) GS extremely low combination of R , Ciss and Coss. DS(ON) This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V 80 V DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 85 C I D G Current T =100C 66 A C C Pulsed Drain Current I 260 DM T =25C 34 A Continuous Drain I A DSM Current T =70C 27 A C Avalanche Current I 60 A AS C Avalanche energy L=0.1mH E 180 mJ AS T =25C 208 C P W D B Power Dissipation T =100C 83 C T =25C 7.4 A P W DSM A T =70C Power Dissipation 4.7 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 14 17 C/W R JA A D Steady-State Maximum Junction-to-Ambient 40 55 C/W Maximum Junction-to-Case Steady-State R 0.46 0.6 C/W JC Rev.2.0: March 2014 www.aosmd.com Page 1 of 6 AON6278 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 80 V D GS DSS V =80V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 2.3 2.75 3.3 V GS(th) DS GS, D V =10V, I =20A 2.75 3.3 GS D m R Static Drain-Source On-Resistance T =125C 4.7 5.7 DS(ON) J V =6V, I =20A 3.5 4.6 m GS D V =5V, I =20A g Forward Transconductance 90 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 4646 pF iss V =0V, V =40V, f=1MHz C Output Capacitance 632 pF oss GS DS C Reverse Transfer Capacitance 31 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.3 0.65 1.0 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 61.5 86 nC g V =10V, V =40V, I =20A Q Gate Source Charge 17 nC gs GS DS D Q Gate Drain Charge 9.5 nC gd t Turn-On DelayTime 13 ns D(on) t Turn-On Rise Time V =10V, V =40V, R =2, 6 ns r GS DS L t Turn-Off DelayTime R =3 36 ns GEN D(off) tt TTuurrnn--OOffff FFaallll TTiimmee 77 nnss f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 32 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 174 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: March 2014 www.aosmd.com Page 2 of 6