EVALUATION KIT AVAILABLE DS28E80 Gamma Radiation Resistant 1-Wire Memory General Description Benefits and Features The DS28E80 is a user-programmable nonvolatile mem- High Gamma Resistance Allows User-Programmable ory chip. In contrast to the floating-gate storage cells, Manufacturing or Calibration Data Before Medical the DS28E80 employs a storage cell technology that is Sterilization resistant to gamma radiation. The DS28E80 has 248 Resistant Up to 75kGy (kiloGray) of Gamma Radiation bytes of user memory that are organized in blocks of Reprogrammable 248 Bytes of User Memory 8 bytes. Individual blocks can be write-protected. Each Lower Block Size Provides Greater Flexibility in memory block can be written 8 times. The DS28E80 Programming User Memory communicates over the single-contact 1-Wire bus at Memory is Organized as 8-Byte Blocks standard speed or overdrive speed. Each device has its Each Block Can Be Written 8 Times own guaranteed unique 64-bit registration number that is User-Programmable Write Protection for Individual factory programmed into the chip. The communication fol- Memory Blocks lows the 1-Wire protocol with a 64-bit registration number Advanced 1-Wire Protocol Minimizes Interface to acting as node address in the case of a multiple-device Just Single Contact 1-Wire network. Compact Package and Single IO Interface Reduces Applications Board Space and Enhances Reliability Identification of Medical Consumables Unique Factory-Programmed, 64-Bit Identification Number Identification and Calibration Medical Tools/Accessories Communicates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max) Operating Range: 3.3V 10%, -40C to + 85C 1-Wire is a registered trademark of Maxim Integrated Products, Inc. Reading, 0C to +50C Writing 8kV HBM ESD Protection (typ) for IO Pin Ordering Information appears at end of data sheet. 6-Pin TDFN Package Typical Application Circuit V CC 10k R PUP V CC PIOX BSS84 DS28E80 C PIOY IO GND GND 19-7120 Rev 1 9/19DS28E80 Gamma Radiation Resistant 1-Wire Memory Absolute Maximum Ratings IO Voltage Range to GND ....................................-0.5V to +4.0V Lead Temperature (soldering, 10s) .................................+300C IO Sink Current.................................................................20mA Soldering Temperature (reflow) Operating Temperature Range ........................... -40C to +85C TDFN ...........................................................................+260C Junction Temperature ......................................................+150C Storage Temperature Range ............................ -55C to +125C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (Note 1) Package Thermal Characteristics TDFN Junction-to-Ambient Thermal Resistance ( ) ..........60C/W JA Junction-to-Case Thermal Resistance ( ) ...............11C/W JC Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Electrical Characteristics (T = -40C to +85C, unless otherwise noted.) (Note 2) A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS IO PIN: GENERAL DATA 1-Wire Pullup Voltage V (Note 3) 2.97 3.63 V PUP 1-Wire Pullup Resistance R V = 3.3V 10% (Note 4) 300 750 PUP PUP Input Capacitance C (Notes 5, 6) 6.5 nF IO Input Load Current I IO pin at V 5 22 A L PUP High-to-Low Switching 0.65 x V (Notes 6, 7, 8) V TL Threshold V PUP Input Low Voltage V (Notes 3, 9) 0.3 V IL Low-to-High Switching 0.75 x V (Notes 6, 7, 10) V TH Threshold V PUP Switching Hysteresis V (Notes 6, 7, 11) 0.3 V HY Output Low Voltage V I = 4mA (Note 12) 0.4 V OL OL Recovery Time t R = 750 (Notes 3, 13) 10 s REC PUP Standard speed 65 Time Slot Duration t s SLOT (Notes 3, 14) Overdrive speed 13 IO PIN: 1-Wire RESET, PRESENCE DETECT CYCLE Standard speed 480 640 Reset Low Time (Note 3) t s RSTL Overdrive speed 48 80 Standard speed 480 Reset High Time (Note 15) t s RSTH Overdrive speed 48 Standard speed 60 72 Presence Detect Sample Time t s MSP (Notes 3, 16) Overdrive speed 8 10 IO PIN: 1-Wire WRITE Standard speed 60 120 Write-Zero Low Time t s W0L (Notes 3, 17) Overdrive speed 8 16 Maxim Integrated 2 www.maximintegrated.com