Product Information

EV1HMC717ALP3

EV1HMC717ALP3 electronic component of Analog Devices

Datasheet
RF Development Tools HMC717A Eval Baord

Manufacturer: Analog Devices
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1: USD 382.725 ea
Line Total: USD 382.72

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MOQ: 1  Multiples: 1
Pack Size: 1
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Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
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EV1HMC717ALP3
Analog Devices

1 : USD 459.3863

     
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HMC717ALP3E v09.0816 Gaas p HEMT MMIC LOW NOIsE aMpLIFIER, 4.8 - 6.0 GHz Features Typical applications The HMC717ALP3E is ideal for: Noise Figure: 1.1 dB Fixed Wireless and LTE/WiMAX/4G Gain: 14.5 dB BTS & Infrastructure Output IP3: +29.5 dBm Repeaters and Femtocells Single Supply: +3V to +5V Public Safety Radio 2 16 Lead 3x3mm QFN Package: 9 mm Access Points Functional Diagram General Description The HMC717ALP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 14.5 dB gain and +29.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical specifications 1 2 T = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V a Vdd = +3V Vdd = +5V Parameter Units Min. Typ. Max. Min. Typ. Max. Frequency Range 4.8 - 6.0 4.8 - 6.0 GHz Gain 12.5 11.0 14.5 dB Gain Variation Over Temperature 0.005 0.01 dB/ C Noise Figure 1.3 1.3 1.8 dB Input Return Loss 8 9 dB Output Return Loss 13 15 dB Output Power for 1 dB Compression (P1dB) 12 18 dBm Saturated Output Power (Psat) 14.5 19 dBm Output Third Order Intercept (IP3) 23.5 29.5 dBm Total Supply Current (Idd) 31 68 100 mA 1 Rbias resistor sets current, see application circuit herein 2 Vdd = Vdd1 = Vdd2 . Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 Order online at www.analog.com 1 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D AMPLIFIER - LOW NOISE - SMTHMC717ALP3E v09.0816 Gaas pHEMT MMIC LOW NOI sE aMpLIFIER, 4.8 - 6.0 GHz 1 2 1 Broadband Gain & Return Loss Gain vs. Temperature 25 19 20 17 15 S21 15 10 13 5 S11 11 0 -5 9 -10 7 -15 5 -20 S22 3 -25 -30 1 123 4567 89 10 4.5 4.9 5.3 5.7 6.1 6.5 FREQUENCY (GHz) FREQUENCY (GHz) Vdd=5V Vdd=3V +25C +85C -40C 2 1 Gain vs. Temperature Input Return Loss vs. Temperature 16 0 14 12 -5 10 8 -10 6 4 -15 2 0 -20 4.5 4.9 5.3 5.7 6.1 6.5 4.5 4.9 5.3 5.7 6.1 6.5 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -40C +25C +85C -40C 1 1 Reverse Isolation vs. Temperature Output Return Loss vs. Temperature 0 -20 -25 -5 -30 -10 -35 -15 -40 -20 -45 -25 -50 4.5 4.9 5.3 5.7 6.1 6.5 4.5 4.9 5.3 5.7 6.1 6.5 FREQUENCY (GHz) FREQUENCY (GHz) +25C +85C -40C +25C +85C -40C 1 Vdd = 5V, Rbias = 825 2 Vdd = 3V, Rbias = 5.76k For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D RETURN LOSS (dB) GAIN (dB) RESPONSE (dB) ISOLATION (dB) RETURN LOSS (dB) GAIN (dB) AMPLIFIER - LOW NOISE - SMT

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