X-On Electronics has gained recognition as a prominent supplier of HMC8411LP2FE rf amplifier across the USA, India, Europe, Australia, and various other global locations. HMC8411LP2FE rf amplifier are a product manufactured by Analog Devices. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

HMC8411LP2FE

HMC8411LP2FE electronic component of Analog Devices
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Part No. HMC8411LP2FE
Manufacturer: Analog Devices
Category: RF Amplifier
Description: RF Amplifier DC- 8 GHz 15 dB Gain
Datasheet: HMC8411LP2FE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

13: USD 55.9232 ea
Line Total: USD 727

Availability - 0
MOQ: 13  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 61.7375
10 : USD 58.6496
25 : USD 56.7583
100 : USD 54.429
500 : USD 54.4183

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Product
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
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Low Noise Amplifier, 0.01 GHz to 10 GHz Data Sheet HMC8411LP2FE FEATURES FUNCTIONAL BLOCK DIAGRAM HMC8411LP2FE Low noise figure: 1.7 dB typical TOP VIEW Single positive supply (self biased) (Not to Scale) High gain: 15.5 dB typical 1 6 R GND BIAS High OIP3: 34 dBm typical RF 2 5 RF /V IN OUT DD 6-lead, 2 mm 2 mm LFCSP NC 3 4 NC APPLICATIONS Figure 1. Test instrumentation Military communications GENERAL DESCRIPTION The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic The HMC8411LP2FE also features inputs and outputs that are microwave integrated circuit (MMIC), pseudomorphic high internally matched to 50 , making the device ideal for surface - electron mobility transistor (pHEMT), low noise wideband mounted technology (SMT)-based, high capacity microwave amplifier that operates from 0.01 GHz to 10 GHz. radio applications. The HMC8411LP2FE provides a typical gain of 15.5 dB, a The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm 1.7 dB typical noise figure, and a typical output third-order 2 mm, 6-lead LFCSP. intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V Multifunction pin names may be referenced by their relevant supply voltage. The saturated output power (PSAT) of 19.5 dBm function only. typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers. Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 2019 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Technical Support www.analog.com Trademarks and registered trademarks are the property of their respective owners. 15859-001HMC8411LP2FE Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions ..............................6 Applications ....................................................................................... 1 Interface Schematics .....................................................................6 Functional Block Diagram .............................................................. 1 Typical Performance Characteristics ..............................................7 General Description ......................................................................... 1 Theory of Operation ...................................................................... 18 Revision History ............................................................................... 2 Applications Information .............................................................. 19 Specifications ..................................................................................... 3 Recommended Bias Sequencing .............................................. 19 0.01 GHz to 1 GHz Frequency Range ........................................ 3 Typical Application Circuit ....................................................... 20 1 GHz to 6 GHz Frequency Range ............................................. 3 Evaluation Board ............................................................................ 21 6 GHz to 10 GHz Frequency Range ........................................... 4 Outline Dimensions ....................................................................... 23 Absolute Maximum Ratings ............................................................ 5 Ordering Guide .......................................................................... 23 Thermal Resistance ...................................................................... 5 ESD Caution .................................................................................. 5 REVISION HISTORY 8/2019Rev. A to Rev. B 3/2019Revision 0: Initial Version Changes to Figure 68 ...................................................................... 17 5/2019Rev. 0 to Rev. A Changes to Table 3 ............................................................................ 4 Changes to Theory of Operation Section .................................... 18 Rev. B Page 2 of 23

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
AD4
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Analog Devices Hittite
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Analog Devices Inc.
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