Product Information

MAX19757ETX+

MAX19757ETX+ electronic component of Analog Devices

Datasheet
RF Mixer Dl SiGe 1700-2700MHz Downconversion Mixer

Manufacturer: Analog Devices
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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MAX19757ETX+
Analog Devices

1 : USD 12.2529
25 : USD 12.2529
50 : USD 12.2529
100 : USD 12.0108
250 : USD 11.4003
500 : USD 11.3161
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Frequency Range
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
RF Frequency
NF - Noise Figure
LO Frequency
IF Frequency
Power Gain Typ
Series
Supply Current
Brand
Maximum Power Dissipation
Noise Figure
Operating Supply Voltage
Factory Pack Quantity :
Technology
Cnhts
Hts Code
Maximum Operating Frequency
Mxhts
Operating Supply Current
Pd - Power Dissipation
Product Type
Subcategory
Taric
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MAX19757 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with Advanced Shutdown Features General Description Benefits and Features The MAX19757 dual-channel downconverter is designed 1700 MHz to 2700MHz RF Frequency Range to provide 8.8dB gain, +25.3dBm input IP3 and 10.4dB 1800 MHz to 2600MHz LO Frequency Range NF for a multitude of 1700MHz to 2700MHz basestation 50MHz to 500MHz IF Frequency Range receiver applications. With an optimized LO frequency range of 1800MHz to 2600MHz, this mixer supports both 25.3dBm IIP3 high- and low-side LO injection architectures for 1700MHz 8.8dB Conversion Gain to 2200MHz and 2000MHz to 2700MHz RF bands, 13.1dBm Input 1dB Compre ssion Point respectively. Independent path shutdown allows the user 10.4dB Noise Figure to save DC power during low-peak usage times or in TDD TX mode. 73dBc 2RF2LO Spurious Rejection at P = -10dBm RF The device integrates baluns in the RF and LO ports, an Dual Channels Ideal for Diversity Receiver LO buffer, two double-balanced mixers, and a pair of dif- Applications ferential IF output amplifiers. The MAX19757 requires a Integrated LO Buffer typical LO drive of 0dBm, and a supply current typically -3dBm to +3dBm LO Drive 300mA at band center and 350mA across the LO frequen- cy band to achieve the targeted linearity performance. Built-In SPDT LO Switch with 50dB LO-to-LO Isolation and 240ns Switching Time The MAX19757 is available in a compact 36-pin TQFN package (6mm x 6mm x 0.8mm) with an exposed paddle. 46dB Channel Isolation Electrical performance is guaranteed over the extended Optional On-Chip Detector at IF Output Automatically -40C to +105C temperature range. Adjusts Bias Current for Optimum Power Management Applications External Current-Setting Resistors Allow Tradeoff 2.3GHz WCS Base Stations Between Power and Performance 2.5GHz WiMAX, LTE, TD-LTE Base Stations Advanced Shutdown Features Include: 2.7GHz MMDS Base Stations UMTS/WCDMA, TD-SCDMA and cdma2000 3G Independent Path Power-Down Rapid Power-Down/Power-Up Modes for Toggling Base Stations DCS1800 and PCS1900 and EDGE Base Stations Between On/Off States in TDD Applications Controlled LO Port Impedance Minimizes VCO Fixed Broadband Wireless Access Wireless Local Loop Pulling During Power Cycling Private Mobile Radios Military Systems Ordering Information appears at end of data sheet. For related parts and recommended products to use with this part, refer to www.maximintegrated.com/MAX19757.related. WiMAX is a registered certification mark and registered service mark of WiMAX Forum. cdma2000 is a registered trademark of Telecommunications Industry Association. 19-6280 Rev 0 12/12MAX19757 Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with Advanced Shutdown Features Absolute Maximum Ratings V .......................................................................-0.3V to +5.5V RFMAIN, RFDIV, LO1, LO2 Input Power .......................+20dBm CC RFMAIN, RFDIV, LO1, LO2, Continuous Power Dissipation (Note 1) ..............................8.7W IFM+, IFM-, IFD+, IFD- ......................... -0.3V to (V + 0.3V) Operating Case Temperature Range (Note 2)...-40C to +105C CC IF RADJ, LO VADJ, LOSEL, Maximum Junction Temperature .....................................+150C LO TUNE1, LO TUNE2 ...................... -0.3V to (V + 0.3V) Storage Temperature Range ............................ -65C to +150C CC RFMAIN to RFM RTN, RFDIV to RFD RTN .....................20mA Lead Temperature (soldering 10s) ..................................+300C PD1, PD2, STBY, IF DET OUT, Soldering Temperature (reflow) .......................................+260C IF DET CEXT ...................................... -0.3V to (V + 0.3V) CC Note 1: Based on junction temperature T = T + ( x V x I ). This formula can be used when the temperature of the J C JC CC CC exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150C. Note 2: T is the temperature on the exposed pad of the package. T is the ambient temperature of the device and PCB. C A Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Package Thermal Characteristics TQFN Junction-to-Case Thermal Resistance JC Junction-to-Ambient Thermal Resistance (Notes 1, 4) ...............................................................+7.4C/W JA (Notes 3, 4) ................................................................+36C/W Note 3: Junction temperature T = T + ( x V x I ). This formula can be used when the ambient temperature of the PCB is J A JA CC CC known. The junction temperature must not exceed +150C. Note 4: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. 5V DC Electrical Characteristics (Typical Application Circuit, V = 4.75V to 5.25V, R1 = 4.87k, R3 = 154k to V , RF and IF single ended ports = 50 to GND, CC CC LO1 port driven from 50 source, P = 0dBm, f = 2350MHz, LOSEL = 5V, LO TUNE1 = LO TUNE2 = 1, PD1 = PD2 = STBY = 0, LO LO T = -40C to +105C. Typical values are at V = 5.0V, P = 0dBm, f = 2350MHz, LO TUNE1 = LO TUNE2 = 1, T = +25C, C CC LO LO C unless otherwise noted.) (Notes 5, 6) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V 4.75 5.00 5.25 V cc f = 1800MHz, LO 350 420 LO TUNE1 = 0, LO TUNE2 = 1 f = 1900MHz, LO 324 395 LO TUNE1 = 0, LO TUNE2 = 1 f = 2100MHz, LO 305 365 LO TUNE1 = 0, LO TUNE2 = 0 Dual-Channel Operation I mA DUALCH Supply Current f = 2300MHz, LO 293 350 LO TUNE1 = 1, LO TUNE2 = 1 f = 2350MHz, LO 290 350 LO TUNE1 = 1, LO TUNE2 = 1 f = 2500MHz, LO 285 345 LO TUNE1 = 1, LO TUNE2 = 0 Maxim Integrated 2 www.maximintegrated.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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