PA50A Apex Microtechnology

PA50A electronic component of Apex Microtechnology
PA50A Apex Microtechnology
PA50A Operational Amplifiers - Op Amps
PA50A  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PA50A Operational Amplifiers - Op Amps across the USA, India, Europe, Australia, and various other global locations. PA50A Operational Amplifiers - Op Amps are a product manufactured by Apex Microtechnology. We provide cost-effective solutions for Operational Amplifiers - Op Amps, ensuring timely deliveries around the world.

Part No.PA50A
Manufacturer:Apex Microtechnology
Category:Operational Amplifiers - Op Amps
Description:Operational Amplifiers - Op Amps Linear OpAmp, 100V, 40A A Grade
Datasheet:PA50A Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
1: USD 814.531 /'
Line Total: USD 814.53 
Availability : 0
  
QtyUnit Price
1$ 814.531
  

Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1092.4452
10$ 988.911

   
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RoHS - XON
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We are delighted to provide the PA50A from our Operational Amplifiers - Op Amps category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PA50A and other electronic components in the Operational Amplifiers - Op Amps category and beyond.

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PA50 PPA50 PA50AA50A PA50, PA50A Power Operational Amplifier FEATURES HIGH INTERNAL DISSIPATION 400 Watts HIGH CURRENT 40A Continuous, 100A PEAK HIGH SLEW RATE 50V/s OPTIONAL BOOST VOLTAGE INPUTS APPLICATIONS SEMI-CONDUCTOR TESTING DESCRIPTION 12-PIN DIP The PA50 is a MOSFET power operational amplifier that PACKAGE STYLE CR extends the performance limits of power amplifiers in slew rate and power bandwidth, while maintaining high current and power dissipation ratings. The JEDEC MO-127 12-pin Power Dip package (see Boost voltage inputs allow the small signal portion of the Package Outlines) is hermetically sealed and isolated from amplifier to operate at a higher voltage than the high current the internal circuits. The use of compressible thermal wash- output stage. The amplifier is then biased to achieve close ers and/or improper mounting torque will void the product linear swings to the supply rails at high currents for extra ef- warranty. Please see General Operating Considerations ficient operation. Application Note 1. EQUIVALENT SCHEMATIC EXTERNAL CONNECTIONS -Vb IN 1 12 +Vb +IN 2 11 +V -V s s 3 10 TOPTOP VIEWVIEW 4 9 -V s +V s 5 8 -OUT +OUT 6 7 -OUT +OUT Copyright Apex Microtechnology, Inc. 2012 JAN 2015 PwwwA50U .apexanalog.com 1 (All Rights Reserved) PA50U REVJPA50 PA50A SUPPLY VOLTAGE, +V to V 100V ABSOLUTE MAXIMUM RATINGS S S BOOST VOLTAGE, +V to -V 130V b b OUTPUT CURRENT, within SOA 100A POWER DISSIPATION, internal 400W INPUT VOLTAGE, differential 20V INPUT VOLTAGE, common mode V b TEMPERATURE, pin solder - 10s 350C 2 TEMPERATURE, junction 150C TEMPERATURE, storage 65 to +150C OPERATING TEMPERATURE RANGE, case 55 to +125C SPECIFICATIONS PA50 PA50A 1 PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS INPUT OFFSET VOLTAGE, initial 5 10 2 5 mV OFFSET VOLTAGE, vs. temperature Full temperature range 20 50 * * V/V OFFSET VOLTAGE, vs. supply 10 30 * * V/V BIAS CURRENT, initial 10 50 * * pA BIAS CURRENT vs. supply 0.01 * pA/V OFFSET CURRENT, initial 10 50 * * pA INPUT IMPEDANCE, DC 10 * INPUT CAPACITANCE 13 * pF COMMON MODE VOLTAGE RANGE Full temperature range -V +12 B +V -14 * V B COMMON MODE REJECTION,DC Full temp, range, V = 20V 90 100 * * dB CM INPUT NOISE 100 kHZ BW, Rs=1 k 10 * Vrms GAIN OPEN LOOP, 15 Hz Full temperature range 94 102 * * dB GAIN BANDWIDTH PRODUCT R =10 3 * MHz L POWER BANDWIDTH R =4 , V = 80V , Av = -10 200 * kHz L o P-P Full temperature range OUTPUT VOLTAGE SWING I = 40A V 9.5 V 8.0 * * V o S S VOLTAGE SWING, PA50 V =V 10V, I=40A V 5.8 V 4.0 V BOOST S o S S VOLTAGE SWING, PA50A V =V 10V, I=50A V 5.8 V 5.0 V BOOST S o S S CURRENT, peak 3ms 10% Duty Cycle 100 * A SETTLING TIME TO 0.1% A = -10,10V STEP,R =4 1 * s V L SLEW RATE A=-10 50 * V/s V RESISTANCE I =0, NO LOAD, 2 MHZ 2.5 * O POWER SUPPLY VOLTAGE, V Full temperature range +14, -12 15 65 * * * V BOOST VOLTAGE, V Full temperature range 3 50 * * V S CURRENT,quiescent, boost supply 26 32 * * mA CURRENT, quiescent, total 30 36 * * mA THERMAL 3 RESISTANCE,AC,junction to case Full temperature range, F>60 HZ 0.2 0.25 * * C/W RESISTANCE,DC,junction to case Full temperature range, F>60 HZ 0.25 0.31 * * C/W RESISTANCE, junction to air Full temperature range 12 * C/W TEMPERATURE RANGE, case Meets full range specification -25 85 * * C NOTES: * The specification of PA50A is identical to the specification for PA50 in applicable column to the left 1. Unless otherwise noted: T = 25C, DC input specifications are value given. Power supply voltage is typical rating. C V = V . BOOST S 2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve high MTTF. For guidance, refer to the heatsink data sheet. 3. Rating applies if the output current alternates between both output transistors at a rate faster than 60 Hz. The PA50 is constructed from MOSFET transistors. ESD handling procedures must be observed. CAUTION The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to temperatures in excess of 850C to avoid generating toxic fumes. 2 PA50U

Tariff Desc

8542.33.00 43 No -- Amplifiers

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