TICP106D

TICP106 SERIES SILICON CONTROLLED RECTIFIERS LP PACKAGE 2 A Continuous On-State Current (TOP VIEW) 15 A Surge-Current G 1 Glass Passivated Wafer A 2 3 K 400 V to 600 V Off-State Voltage MDC1AA Max I of 200 A GT LP PACKAGE Package Options WITH FORMED LEADS (TOP VIEW) PACKAGE PACKING PART # SUFFIX LP Bulk (None) G LP with fomed leads Tape and Reel R 1 A 2 3 K MDC1AB absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TICP106D 400 Repetitive peak off-state voltage (see Note 1) V V DRM TICP106M 600 TICP106D 400 Repetitive peak reverse voltage V V RRM TICP106M 600 Continuous on-state current at (or below) 25C case temperature (see Note 2) I 2 A T(RMS) Surge on-state current (see Note 3) I 15 A TSM Peak positive gate current (pulse width 300 s) I 0.2 A GM Average gate power dissipation (see Note 4) P 0.3 W G(AV) Operating case temperature range T -40 to +110 C C Storage temperature range T -40 to +125 C stg Lead temperature 3.2 mm from case for 10 seconds T 230 C L NOTES: 1. These values apply when the gate-cathode resistance R = 1 k . GK 2. These values apply for continuous dc operation with resistive load. Above 25C derate linearly to zero at 110C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms. MARCH 1988 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice. OBSOLETETICP106 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Repetitive peak I V = rated V R = 1 k 20 A DRM D DRM GK off-state current Repetitive peak I V = rated V I = 0 200 A RRM R RRM G reverse current I Gate trigger current V = 12 V R = 100 t 20 s 5 200 A GT AA L p(g) R = 100 L V Gate trigger voltage V = 12 V t 20 s 0.4 1 V GT AA p(g) R =1k GK I Holding current V = 12 V R =1k Initiating I = 10 mA 5 mA H AA GK T V On-state voltage I =1A (see Note 5) 1.5 V T T NOTE 5: This parameter must be measured using pulse techniques, t = 1 ms, duty cycle 2 %. Voltage sensing-contacts, separate from p the current carrying contacts, are located within 3.2 mm from the device body. MARCH 1988 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice. OBSOLETE