NTE5351 Silicon Controlled Rectifier (SCR) for High Speed Switching, 600V, 5 Amp, TO66 Features: Fast TurnOff Time High di/dt and dv/dt Capabilities Shorted Emitter GateCathode Construction Center Gate Construction Non Repetitive Peak Reverse Voltage (Gate Open, Note 1), V . . . . . . . . . . . . . . . . . . . . . 700V RSOM Non Repetitive Peak OffState Voltage (Gate Open, Note 1), V . . . . . . . . . . . . . . . . . . . . 700V DSOM Repetitive Peak Reverse Voltage (Gate Open, Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RROM Repetitive Peak OffState Voltage (Gate Open, Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . 600V DROM RMS On State Current (T = +60C, 180 conduction angle), I . . . . . . . . . . . . . . . . . . . . 5.0A C T(RMS) Average On State Current (T = +60C, 180 conduction angle), I . . . . . . . . . . . . . . . . . . 3.2A C T(AV) Peak Surge (Non Repetitive) On State Current, I TSM (T = +60C, for one full cycle at applied voltage) C 60Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A Rate of Change of On State Current (V = 600V, I = 50mA, t = 1 to 8.3ms), di/dt . . . . . 200A/s D GT 2 Fusing Current (T = 40 to +100C, t = 1 to 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A J Peak Forward Gate Power Dissipation (10s Max, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . 3W GM Peak Reverse Gate Power Dissipation (10s Max, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . 3W RGM Average Gate Power Dissipation (10s Max, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Operating Case Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8C/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W thJA Lead Temperature (During Soldering, 1/32 from seating plane, 10sec max), T . . . . . . . . . +225C L Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.Electrical Characteristics: (At Maximum Ratings and T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Forward Current I V = 600V, T = +100C, Gate Open 0.5 3.0 mA DOM D C Peak OffState Reverse Current I V = 600V, T = +100C, Gate Open 0.3 1.5 mA ROM D C Instantaneous OnState Voltage v i = 30A Peak 2.2 3.0 V T T Instantaneous Holding Current i Gate Open 20 50 mA HO Critical Rate of Rise of OffState dv/dt V = 600V, exponential voltage rise, 100 250 V/s D Current T = +80C, Gate Open C DC Gate Trigger Current I V = 12V, R = 30 15 40 mA GT D L DC Gate Trigger Voltage V V = 12V, R = 30 1.8 3.5 V GT D L Gate Controlled TurnOn Time t V = 600V, I = 300mA, t = 0.1s, 0.7 s gt DX GT r I = 2A peak T Circuit Commutated TurnOff t V = 600V, i = 2A, pulse duration = 50s, 4 6 s q CX T Time dv/dt = 100V/s, di/dt = 10A/s, I = 100mA, V = 0V (at turnoff), GT GT T = +80C C .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .360 (9.14) Min .960 (24.3) Gate .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Anode/Case Cathode