TISP4350H4BJR-S Bourns

TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4350H4BJ HIGH HOLDING CURRENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxH4BJ Overvoltage Protector Series Agency Recognition ITU-T K.20/21 Rating ........................ 8 kV 10/700, 200 A 5/310 High Holding Current ........................................... 225 mA min. Description UL File Number: E215609 Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge SMBJ Package (Top View) V V DRM (BO) Device V V 4165 135 165 12 R(B) T(A) 4180 145 180 4200 155 200 4265 200 265 MDXXBG 4300 230 300 4350 275 350 Device Symbol Rated for International Surge Wave Shapes T I TSP Waveshape Standard A 2/10 s GR-1089-CORE 500 8/20 s IEC 61000-4-5 300 SD4XAA 10/160 s FCC Part 68 250 R 10/700 s ITU-T K.20/21 200 Terminals T and R correspond to the 10/560 s FCC Part 68 160 alternative line designators of A and B 10/1000 s GR-1089-CORE 100 Low Differential Capacitance ................................... 67 pF max...............................................UL Recognized Component Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. How to Order NOVEMBER 1997 Device Package Carrier Order As REVISED JULY 2019 *RoHS Directive 2015/863, Embossed Tape Reeled TISP4xxxH4BJR-S TISP4xxxH4BJ BJ (J-Bend DO-214AA/SMB) Mar 31, 2015 and Annex. Bulk Pack TISP4xxxH4BJ-S Specifications are subject to change without notice. Users should verify actual Insert xxx value corresponding to protection voltages of 165 through to 350. device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov TISP4xxxH4BJ Overvoltage Protector Series Description This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available. Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4165 135 4180 145 Repetitive peak off-state voltage, (see Note 1) 4200 V 155 V DRM 4265 200 4300 230 4350 275 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 500 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 300 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 250 5/200 s (VDE 0433, 10/700 s voltage wave shape) 220 I A TSP 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 200 5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape) 200 5/310 s (FTZ R12, 10/700 s voltage wave shape) 200 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 160 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 100 Non-repetitive peak on-state current (see Notes 2, 3 and 5) 55 20 ms (50 Hz) full sine wave I 60 A 16.7 ms (60 Hz) full sine wave TSM 2.1 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A di /dt 400 A/s T Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures. 2. Initially, the TISP4xxxH4BJ must be in thermal equilibrium with T =25 C. J 3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions. 4. See Applications Information and Figure 11 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C. NOVEMBER 1997 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.