ASML-5822 Schottky Assisted Low Power PIN Diode Limiter Data Sheet Description Features The ASML-5822 is specifically designed for low power Low Power Limiter with unique combination of PIN and limiter applications, where it can be used to protect the Schottky Diode receiver system from being damaged by large input Low limiting threshold power (OP1dB : 2.85 dBm signals, and allow the receiver system to function normally 900MHz) with the absence of large signal. The Schottky enhanced Semi integrated solution in Surface Mount SOT-323 limiter will have a lower limiting threshold compared to Package the more conventional self-biased PIN limiter. The PIN diode is placed at the input, to protect the Schottky from design simplicity high RF power levels. save board space reduce cost PIN Diode features: Pin Connections and Package Marking, SOT-323 Power Limiting /Circuit Protection 1 Low Failure in Time (FIT) Rate Schottky Diode features: Low Turn-On Voltage PIN Diode Schottky Diode (As Low as 0.34 V at 1 mA) 1 Low FIT (Failure in Time) Rate Note: 1. For more information see the Surface Mount PIN Reliability Data Sheet. F6 Notes: F6 = Device Code = Month code indicates the month of manufacture 1 Table 1. Absolute Maximum Rating Tc = +25C Absolute Max. Absolute Max. Symbol Parameter Units for PIN Diode for Schottky DIode I Forward Current (1s Pulse) Amp 1 1 F P Peak Inverse Voltage V 50 15 IV T Junction Temperature C 150 J T Storage Temperature C -65 to 150 STG 2 Thermal Resistance C/W 500 JC Notes: 1. Operation in excess of anyone of these conditions may result in permanent damage to the device. 2. T = 25C, T where is defined to be the temperature at the package pins where contacts is made to the circuit board. C C Table 2. Electrical Specifications, Tc = +25C, PIN diode Symbol Parameter and Test Condition Units Min. Typ Max. V Breakdown Voltage, I 10A V 50 60 BR R V Forward Voltage, I = 100mA V 0.93 F F R Typical Series Resistance, Freq = 100MHz & I = 1mA Ohm 1.2 S F R Typical Series Resistance, Freq = 100MHz & I = 10mA Ohm 0.5 0.6 S F C Typical Total Capacitance, Freq = 1MHz & V = 0V pF 0.9 T R C Typical Total Capacitance, Freq = 1MHz & V = 20V pF 0.53 0.8 T R Carrier Lifetime I =10mA & I =6mA ns 70 F R Table 3. Electrical Specifications, Tc = +25C, Schottky diode Symbol Parameter and Test Condition Units Min. Typ Max. V Breakdown Voltage, I 100A V 15 22 BR R I Reverse Leakage Current V = 1V nA 40 100 R BR V Forward Voltage, I = 1mA V 0.32 0.34 F F V Forward Voltage, I = 10mA V 0.45 0.50 F F C Typical Total Capacitance, Freq = 1MHz & V = 0V pF 0.7 1.0 T R R Typical Dynamic Resistance, I =5mA Ohm 12 D F 2