SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz under the 7.5 V supply voltage. FEATURES High output power : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) High power added efficiency : add = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : add = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) High linear gain : GL = 15.0 dB TYP. (f = 900 MHz, VDS = 7.5 , Pin = 5 dBm V, IDset = 400 mA) : GL = 18.5 dB TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 5 dBm, IDset = 400 mA) Surface mount package : 5.7 5.7 1.1 mm MAX. Single supply : VDS = 2.8 to 8.0 V APPLICATIONS 460 MHz Radio Systems 900 MHz Radio Systems ORDERING INFORMATION Part Number Package Marking Supplying Form NE5511279A-T1 79A W3 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 1 kpcs/reel NE5511279A-T1A 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5511279A-A Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10322EJ01V0DS (1st edition) Date Published June 2003 CP(K) NE5511279A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Note Drain to Source Voltage VDS 20 V Gate to Source Voltage VGS 6.0 V Drain Current ID 3.0 A Total Power Dissipation Ptot 20 W Channel Temperature Tch 125 C Storage Temperature Tstg 55 to +125 C Note VDS will be used under 12 V on RF operation. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage VDS 7.5 8.0 V Gate to Source Voltage VGS 0 2.0 3.0 V Drain Current ID Duty Cycle 50%, Ton 1 s 2.5 3.0 A Input Power Pin f = 900 MHz, VDS = 7.5 V 27 30 dBm 2 Data Sheet PU10322EJ01V0DS