X-On Electronics has gained recognition as a prominent supplier of PD57070-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD57070-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD57070-E STMicroelectronics

Name: PD57070-E
Brand: STMicroelectronics
SKU: PD57070E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD57070-E electronic component of STMicroelectronics

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Part No.	PD57070-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Datasheet:	PD57070-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

6: USD 40.352 ea
Line Total: USD 242.11

Availability - 0

MOQ: 6 Multiples: 1
Pack Size: 1

PD57070-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 08 May to Wed. 14 May MOQ : 6 Multiples : 1	6 : USD 40.352

We are delighted to provide the PD57070-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD57070-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 70 W with 14.7dB gain 945 MHz/28 V OUT New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PowerSO-10RF Devices superior linearity performance makes it (straight lead) an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been Figure 1. Pin connection specially optimized for RF needs and offers Source excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57070-E PowerSO-10RF (formed lead) Tube PD57070S-E PowerSO-10RF (straight lead) Tube PD57070TR-E PowerSO-10RF (formed lead) Tape and reel PD57070STR-E PowerSO-10RF (straight lead) Tape and reel June 2010 Doc ID 12528 Rev 2 1/22 www.st.com 22Contents PD57070-E, PD57070S-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedances 5 4 Typical performance . 6 5 Test circuit . 9 6 Common source s-parameter 12 7 Package mechanical data 16 8 Revision history . 21 2/22 Doc ID 12528 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 7 A 7 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Operating Frequency 1 GHz 1 GHz
Gain 14.7 Db At 945 Mhz 14.7 Db At 945 Mhz
Output Power 70 W 70 W
Configuration Single Single
Pd - Power Dissipation 95 W 95 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Tube Tube
Vgs - Gate-Source Voltage +/- 20 V +/- 20 V
Series Pd57070 - E Pd57070 - E
Height 3.5 mm 3.5 mm
Length 7.5 mm 7.5 mm
Type Rf Power Mosfet Rf Power Mosfet
Width 9.4 mm 9.4 mm
Brand Stmicroelectronics Stmicroelectronics
Channel Mode Enhancement Enhancement
Factory Pack Quantity : 400 400