CBRHD-01 TR13 Central Semiconductor

CBRHD-01 SURFACE MOUNT www.centralsemi.com HIGH DENSITY DESCRIPTION: 0.8 AMP The CENTRAL SEMICONDUCTOR CBRHD-01 is a SILICON BRIDGE RECTIFIER silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING CODE: CBD1 FEATURES: 2 Efficient use of board space: requires only 42mm of board 2 space vs. 120mm of board space needed for industry standard 1.0 Amp surface mount bridge rectifier. HD DIP CASE 2 50% higher density (Amps/mm ) than the industry standard This series is UL listed: file number E130224 1.0 Amp surface mount bridge rectifier. Glass passivated chips for high reliability. MAXIMUM RATINGS: (T =25C unless otherwise noted) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 100 V RRM DC Blocking Voltage V 100 V R RMS Reverse Voltage V 70 V R(RMS) Average Forward Current (T =40C) (Note1) I 0.5 A A O Average Forward Current (T =40C) (Note 2) I 0.8 A A O Peak Forward Surge Current I 30 A FSM Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (Note 3) 85 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS I V = 100V 5.0 A R R I V = 100V, T=125C 500 A R R A V I =400mA 1.0 V F F C V =4.0V, f=1.0MHz 9.0 pF J R Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. (3) Mounted on PCB with 0.5 x 0.5 copper pads. R2 (4-January 2010)CBRHD-01 SURFACE MOUNT HIGH DENSITY 0.8 AMP SILICON BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CBD1 R2 (4-January 2010) www.centralsemi.com